5秒后页面跳转
捷配首页

Datasheet > P6SMB13AHE3_A/H
P6SMB13AHE3_A/H PDF预览

P6SMB13AHE3_A/H

更新时间： 2024-11-02 19:46:31
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 107K
描述
Trans Voltage Suppressor Diode, 600W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

阅读下载

中文翻译

获取价格

P6SMB13AHE3_A/H 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.13其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：13.7 V最小击穿电压：12.4 V
击穿电压标称值：13 V最大钳位电压：18.2 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：5 W
参考标准：AEC-Q101最大重复峰值反向电压：11.1 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：30Base Number Matches：1

P6SMB13AHE3_A/H 数据手册

 浏览型号P6SMB13AHE3_A/H的Datasheet PDF文件第2页浏览型号P6SMB13AHE3_A/H的Datasheet PDF文件第3页浏览型号P6SMB13AHE3_A/H的Datasheet PDF文件第4页浏览型号P6SMB13AHE3_A/H的Datasheet PDF文件第5页 
P6SMB Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AA (SMB J-Bend)  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.8 V to 459 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
V
BR (uni-directional)  
6.8 V to 540 V  
6.8 V to 220 V  
600 W  
V
BR (bi-directional)  
PPPM  
PD  
5.0 W  
MECHANICAL DATA  
IFSM (uni-directional only)  
100 A  
Case: DO-214AA (SMB J-Bend)  
TJ max.  
150 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant and commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B, .....)  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMB J-Bend)  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. P6SMB10CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
5.0  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 23-Dec-14  
Document Number: 88370  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

下载PDF

与P6SMB13AHE3_A/H相关器件

型号 品牌 获取价格 描述 数据表
P6SMB13AHE3_A/I VISHAY

获取价格

 		Trans Voltage Suppressor Diode, 600W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6SMB13A-M3/52 VISHAY

获取价格

 		TVS DIODE 11.1V 18.2V DO214AA
P6SMB13A-M3/5B VISHAY

获取价格

 		TVS DIODE 11.1V 18.2V DO214AA
P6SMB13AQ YANGJIE

获取价格

 		Surface Mount Transient Voltage Suppressors
P6SMB13A-Q1 ANBON

获取价格

 		SMB
P6SMB13AS PANJIT

获取价格

 		SMB
P6SMB13AT3 ONSEMI

获取价格

 		600 Watt Peak Power Zener Transient Voltage Suppressors
P6SMB13AT3G ONSEMI

获取价格

 		600 Watt Peak Power Zener Transient Voltage Suppressors
P6SMB13AT3G LITTELFUSE

获取价格

 		Trans Voltage Suppressor Diode, 600W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, SM
P6SMB13ATR13 CENTRAL

获取价格

 		Trans Voltage Suppressor Diode, 600W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon,

与P6SMB13AHE3_A/H相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证