P6SMB11CA

更新时间： 2024-11-04 12:11:31

品牌	Logo	应用领域
鲁光 - LGE		瞬态抑制二极管光电二极管局域网
页数	文件大小	规格书
3页	206K
描述
Glass Passivated Junction Transient Voltage Suppressor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P6SMB11CA 技术参数

Case Style：	SMB	Ppk(W)：	600
MIN_(V)：	10.45	MAX_(V)：	11.55
Vwm_(V)：	9.4	Ir_(uA)：	5
Ippm_(A)：	38.46	Vc_(V)：	15.6
class：	Diodes

P6SMB11CA 数据手册

P6SMB SERIES

Glass Passivated Junction Transient Voltage Suppressor

VOLTAGE - 6.8 TO 550 Volts

600 Watt Peak Pulse Power

Features

DO - 214AA(SMB)

• For surface mounted applications in order to

optimize board space

4.7± 0.25

• Glass passivated junction

• Built-in strain relief

• Excellent clamping capability

• Low profile package

• Low inductance

• Excellent clamping capability

• Fast response time: typically less than

1.0 ps from 0 volts to BV min

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

250°C/10 seconds at terminals

5.4± 0.2

0.2± 0.05

1.3± 0.2

Mechanical Data

Case: JEDEC DO-214AA Molded plastic

Terminal： Solder plated, solderable per

MIL-STD-750, Method 2026

Dimensions in millimeters

Polarity: Color band denoted positive end (cathode)

except Bipolar

Standard Packaging: 12mm tape(EIA STD RS-481)

Weight: 0.003 ounces, 0.093 grams

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use CA Suffix for types P6SMB6.8CA thru types P6SMB550CA Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

P_PPM

VALUE

Minimum 600

SEE TABLE 1

UNITS

Watts

Amps

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms (Note 1)

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

Lead lengths .375", 9.5mm (Note 2)

P_M

1.0

Watts

(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

Operatings and Storage Temperature Range

NOTES:

100

Amps

°C

I_FSM

T_J, T_STG

-55 +150

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on 5.0mm²(0.03mm thick) Copper Pads to each termina

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

http://www.luguang.cn

mail:lge@luguang.cn

12 3

中文翻译

下载PDF

与P6SMB11CA相关器件

型号	品牌	获取价格	描述	数据表
P6SMB11CA/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 9.4V V(RWM), Bidirectional,
P6SMB11CA/5B	VISHAY	获取价格	Transient Suppressor,
P6SMB11CA/5B-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient S
P6SMB11CA/TR7	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P6SMB11CA-5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P6SMB11CA-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P6SMB11CA-AU	PANJIT	获取价格	SMB
P6SMB11CABKPBFREE	CENTRAL	获取价格	Trans Voltage Suppressor Diode, 9.4V V(RWM), Bidirectional,
P6SMB11CA-E3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB11CA-E3/5B	VISHAY	获取价格	TVS DIODE 9.4V 15.6V DO214AA

与P6SMB11CA相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB11CA

P6SMB11CA 技术参数

P6SMB11CA 数据手册

与P6SMB11CA相关器件

与P6SMB11CA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB11CA

P6SMB11CA 技术参数

P6SMB11CA 数据手册

与P6SMB11CA相关器件

与P6SMB11CA相关文章

您还可以找

您在本页遇到什么问题？