Datasheet > P6SMB11CA-E3/52

P6SMB11CA-E3/52

更新时间： 2024-11-04 19:23:47

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管电视
页数	文件大小	规格书
5页	112K
描述
DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P6SMB11CA-E3/52 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	0.86
其他特性：	EXCELLENT CLAMPING CAPABILITY	最大击穿电压：	11.6 V
最小击穿电压：	10.5 V	击穿电压标称值：	11 V
外壳连接：	ISOLATED	最大钳位电压：	15.6 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	600 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	BIDIRECTIONAL	最大功率耗散：	5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	9.4 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

P6SMB11CA-E3/52 数据手册

P6SMB Series

Vishay General Semiconductor

www.vishay.com

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

Available

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMB (DO-214AA)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM(uni-directional)

5.8 V to 459 V

TYPICAL APPLICATIONS

V_WM(bi-directional)

5.8 V to 185 V

6.8 V to 540 V

6.8 V to 220 V

600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

V_BR(uni-directional)

_BR(bi-directional)

P_PPM

P_D

5.0 W

MECHANICAL DATA

_FSM(uni-directional only)

100 A

Case: SMB (DO-214AA)

T_Jmax.

150 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Polarity

Uni-directional, bi-directional

SMB (DO-214AA)

Package

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, ..... and only available

for 250 V to 540 V type)

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. P6SMB10CA).

Electrical characteristics apply in both directions.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

Power dissipation on infinite heatsink at T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_PPM

See next table

5.0

P_D

I_FSM

100

T_J, T_STG

-65 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 14-Jul-17

Document Number: 88370

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与P6SMB11CA-E3/52相关器件

型号	品牌	获取价格	描述	数据表
P6SMB11CA-E3/5B	VISHAY	获取价格	TVS DIODE 9.4V 15.6V DO214AA
P6SMB11CAHE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB11CA-HE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB11CAHE3/5B	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
P6SMB11CALEADFREE	CENTRAL	获取价格	暂无描述
P6SMB11CA-M3/52	VISHAY	获取价格	TVS DIODE 9.4V 15.6V DO214AA
P6SMB11CA-M3/5B	VISHAY	获取价格	TVS DIODE 9.4V 15.6V DO214AA
P6SMB11CAQ	YANGJIE	获取价格	SMB
P6SMB11CA-Q1	ANBON	获取价格	SMB
P6SMB11CAS	PANJIT	获取价格	SMB

与P6SMB11CA-E3/52相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB11CA-E3/52

P6SMB11CA-E3/52 技术参数

P6SMB11CA-E3/52 数据手册

与P6SMB11CA-E3/52相关器件

与P6SMB11CA-E3/52相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6SMB11CA-E3/52

P6SMB11CA-E3/52 技术参数

P6SMB11CA-E3/52 数据手册

与P6SMB11CA-E3/52相关器件

与P6SMB11CA-E3/52相关文章

您还可以找

您在本页遇到什么问题？