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P6KE9.1COX.250 PDF预览

P6KE9.1COX.250

更新时间: 2024-11-05 05:56:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
2页 77K
描述
Trans Voltage Suppressor Diode, 600W, 7.78V V(RWM), Unidirectional, 1 Element, Silicon

P6KE9.1COX.250 技术参数

生命周期:Transferred包装说明:O-MEDB-N2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.49
击穿电压标称值:9.1 V最大钳位电压:13.4 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-MEDB-N2
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:METAL
封装形状:ROUND封装形式:DISK BUTTON
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:7.78 V最大反向电流:50 µA
表面贴装:YES技术:AVALANCHE
端子形式:NO LEAD端子位置:END

P6KE9.1COX.250 数据手册

 浏览型号P6KE9.1COX.250的Datasheet PDF文件第2页 

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