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P6KE9.1-B PDF预览

P6KE9.1-B

更新时间: 2024-02-16 04:34:46
品牌 Logo 应用领域
FRONTIER /
页数 文件大小 规格书
1页 61K
描述
Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon

P6KE9.1-B 技术参数

生命周期:Obsolete包装说明:O-XALF-W2
Reach Compliance Code:unknown风险等级:5.37
最小击穿电压:8.19 V击穿电压标称值:9.1 V
外壳连接:ISOLATED最大钳位电压:13.8 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-XALF-W2
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大反向电流:50 µA表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIAL

P6KE9.1-B 数据手册

  

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