5秒后页面跳转
P6KE82A PDF预览

P6KE82A

更新时间: 2024-11-03 22:54:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管局域网
页数 文件大小 规格书
6页 81K
描述
UNI AND BIDIRECTIONAL TYPES, PEAK PULSEPOWER : 600W

P6KE82A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-15包装说明:O-PALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.31其他特性:UL RECOGNIZED
最大击穿电压:86.1 V最小击穿电压:77.9 V
击穿电压标称值:82 V外壳连接:ISOLATED
最大钳位电压:146 V配置:SINGLE
最小二极管电容:550 pF二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:70.1 V
最大反向电流:5 µA子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

P6KE82A 数据手册

 浏览型号P6KE82A的Datasheet PDF文件第2页浏览型号P6KE82A的Datasheet PDF文件第3页浏览型号P6KE82A的Datasheet PDF文件第4页浏览型号P6KE82A的Datasheet PDF文件第5页浏览型号P6KE82A的Datasheet PDF文件第6页 
P6KE6V8A/440A  
P6KE6V8CA/440CA  
TM  
TRANSIL  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
BREAKDOWN VOLTAGE RANGE :  
From 6.8V to 440 V.  
UNI AND BIDIRECTIONAL TYPES.  
LOW CLAMPINGFACTOR.  
FAST RESPONSETIME.  
UL RECOGNIZED.  
DESCRIPTION  
CB417  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particularly  
suited to protect voltage sensitive devices such as  
MOSTechnology and low voltage supplied IC’s.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
(Tamb = 25°C)  
Parameter  
Value  
600  
5
Unit  
W
PPP  
P
Peak pulse power dissipation (see note 1)  
Power dissipationon infinite heatsink  
Tj initial =Tamb  
amb = 75°C  
T
W
Non repetitivesurge peak forward current  
For Unidirectionaltypes.  
Tj initial =Tamb  
tp =10 ms  
IFSM  
100  
A
Tstg  
Tj  
Storage temperaturerange  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
Maximum lead temperaturefor soldering during 10s at 5mm  
from case  
TL  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
Junction-leads  
Junction to ambient on printed circuit.  
Rth (j-a)  
Llead = 10 mm  
75  
November 1998 - Ed: 2A  
1/6  

与P6KE82A相关器件

型号 品牌 获取价格 描述 数据表
P6KE-82A FCI

获取价格

6.8V to 200V GPP TRANSIENT VOLTAGE SUPPRESSORS
P6KE82A / CA SWST

获取价格

瞬态电压抑制管
P6KE82A/23 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6KE82A/51 VISHAY

获取价格

Transient Suppressor,
P6KE82A/51-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transien
P6KE82A/54-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Transien
P6KE82A/73 VISHAY

获取价格

Transient Suppressor,
P6KE82A-13 DIODES

获取价格

Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-1
P6KE82A-51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 70.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6KE82A-51-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15, PLASTIC, DO-214AC, 2 PIN, Transien