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P6KE8.2C-T PDF预览

P6KE8.2C-T

更新时间: 2024-11-04 20:00:11
品牌 Logo 应用领域
美台 - DIODES 局域网二极管
页数 文件大小 规格书
1页 119K
描述
Trans Voltage Suppressor Diode, 600W, 6.63V V(RWM), Bidirectional, 1 Element, Silicon, DO-15

P6KE8.2C-T 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.08
最大击穿电压:9.02 V最小击穿电压:7.38 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:6.63 V
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

P6KE8.2C-T 数据手册

  

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