Datasheet > P6KE51CA

P6KE51CA

更新时间： 2024-11-15 14:47:35

品牌	Logo	应用领域
鲁光 - LGE		瞬态抑制二极管
页数	文件大小	规格书
5页	4258K
描述
瞬态抑制二极管

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

P6KE51CA 技术参数

Case Style：	DO-15	Ppk(W)：	600
MIN_(V)：	48.45	MAX_(V)：	53.55
Vwm_(V)：	43.6	Ir_(uA)：	1
Ippm_(A)：	8.56	Vc_(V)：	70.1
class：	Diodes

P6KE51CA 数据手册

P6KE SERIES

600 Watts Transient Voltage SuppressorDiodes

DO-15

Features

ꢀ

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

600W surge capability at 10 x 1000 us

Excellent clamping capability

Low Dynamic impedance

ꢀ

waveform

Fast response time: Typically less than 1.0ps

from 0 volts to VBR for unidirectional and 5.0 ns

for bidirectional

ꢀ

Typical I_Rless than 1uA above 10V

High temperature soldering guaranteed:

260^oC / 10 seconds / .375”,(9.5mm) lead length

/ 5lbs.,(2.3kg) tension

Dimensions in inches and (millimeters)

Mechanical Data

ꢀ

Case: Molded plastic

ꢀ

Polarity: Color band denotes cathode except

bipolar

ꢀ

Weight: 0.42gram

Maximum Ratings and Electrical Characteristics

Rating at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol

Value

Minimum 600

Units

Watts

Peak Power Dissipation at T_A=25^OC, Tp=1ms (Note 1)

P_PK

Steady State Power Dissipation at T_L=75 ^oC

Lead Lengths .375”, 9.5mm (Note 2)

P_D

5.0

Watts

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load

(JEDEC method) (Note 3)

Maximum Instantaneous Forward Voltage at 50.0A for

Unidirectional Only (Note 4)

I_FSM

V_F

100

Amps

Volts

3.5 / 5.0

Typical Thermal Resistance (Note 5)

ΘJL

^oC/W

^oC

ΘJA

Operating and Storage Temperature Range

T_J, T_STG

-55 to + 175

Notes:

1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T_A=25^oC Per Fig. 2.

2. Mounted on Copper Pad Area of 0.4 x 0.4” (10 x 10 mm) Per Fig. 4.

3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per

Minutes Maximum.

≤

4. V_F=3.5V for Devices of V_BR200V and V_F=5.0V Max. for Devices of V_BR>200V.

5. Measured on P.C.B. with 10mm x 10mm.

Devices for Bipolar Applications

1. For Bidirectional Use C or CA Suffix for Types P6KE6.8 through Types P6KE440.

2. Electrical Characteristics Apply in Both Directions.

- 570 -

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3 4 5

中文翻译

下载PDF

与P6KE51CA相关器件

型号	品牌	获取价格	描述	数据表
P6KE51CA.TR	SEMTECH	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15
P6KE51CA/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 43.6V V(RWM), Bidirectional,
P6KE51CA/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 43.6V V(RWM), Bidirectional,
P6KE51CA-13	DIODES	获取价格	Trans Voltage Suppressor Diode, 600W, 43.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE51CA-54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 43.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE51CA-54-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15, PLASTIC, DO-214AC, 2 PIN, Transient
P6KE51CA-7	DIODES	获取价格	Transient Suppressor,
P6KE51CA-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P6KE51CAB	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15
P6KE51CAB	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 43.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-

与P6KE51CA相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

P6KE51CA

P6KE51CA 技术参数

P6KE51CA 数据手册

与P6KE51CA相关器件

与P6KE51CA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6KE51CA

P6KE51CA 技术参数

P6KE51CA 数据手册

与P6KE51CA相关器件

与P6KE51CA相关文章

您还可以找

您在本页遇到什么问题？