Datasheet > P6KE13C-B

P6KE13C-B

更新时间： 2024-11-16 22:57:07

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	969K
描述
TVS DIODE 11.1V 19.11V DO204AC

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中文翻译

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P6KE13C-B 数据手册

TVS Diodes

Axial Leaded – 600W > P6KE series

Pb e3

RoꢀS

P6KE Series

Description

The P6KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• 600W peak pulse

• Typical I_Rless than 1μA

when V_BRmin>12V

• Compatible with high

temperature reﬂow

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

Uni-directional

• Glass passivated chip

soldering (260°C/30 s)

junction in DO-15 Package

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• UL Recognized epoxy

meeting ﬂammability

classiﬁcation V-0

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

Agency Approvals

Agency

Agency File Number

E230531

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• Matte tin lead–free plated

• Whisker test conducted

based onTable 4a and 4c

of JEDEC JESD201A

• IEC 61000-4-2 ESD

30kV(Air), 30kV (Contact)

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Low incremental surge

resistance

• Halogen free and RoHS

compliant

Parameter

Symbol

Value

Unit

Peak Pulse Power Dissipation(Fig.2) by 10/1000us

Test Waveform(Fig.4)(Note 1)

-Single Die Parts

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

P_PPM

600

Peak Pulse Power Dissipation(Fig.2) by

10/1000usTest Waveform(Fig.4)(Note 1)

-Stacked Die Parts(Note 4)

P_PPM

800

Steady State Power Dissipation on Inﬁnite Heat

Sink atT_L=75ºC

P_D

I_FSM

V_F

5.0

100

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave Unidirectional Only (Note 2)

Maximum Instantaneous Forward Voltage at 50A

for Unidirectional Only (Note 3)

3.5/5.0

Operating Junction and StorageTemperature

Range

T_J, T_STG-55 to 175 °C

Applications

TypicalThermal Resistance Junction to Lead

TypicalThermal Resistance Junction to Ambient

R_ƟJL

R_ƟJA

°C/W

TVS components are ideal for the protection of I/O

interfaces, V_CCbus and other vulnerable circuits used in

telecom, computer, industrial and consumer electronic

applications.

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated above T_J(initial) = 25^OC per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per minute maximum.

3. V_F< 3.5V for single die parts and V_F< 5.0V for stacked-die parts.

4. For stacked die component details, please refer to part numbers labeled by * in Electrical Characteristics.

Additional Infomarion

Functional Diagram

Bi-directional

Dꢀꢁꢀsꢂeeꢁ

Sꢀꢁꢂꢃes

ꢀesoꢁꢂꢃes

Catꢀode

ꢁnode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: JC.10/26/20

12 3 4 5 6

中文翻译

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与P6KE13C-B相关器件

型号	品牌	获取价格	描述	数据表
P6KE13CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KE13C-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE13C-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 10.5V V(RWM), Bidirectional,
P6KE13C-G	COMCHIP	获取价格	600W Transient Voltage Suppressor
P6KE13C-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE13C-G	WEITRON	获取价格	Trans Voltage Suppressor Diode, 11.1V V(RWM), Bidirectional
P6KE13C-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE13CG-TN3-R	UTC	获取价格	Trans Voltage Suppressor Diode,
P6KE13CG-Z15-B	UTC	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE13CH15	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15

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