Datasheet > P6KE13C-T3-LF

P6KE13C-T3-LF

更新时间： 2024-11-17 06:26:55

品牌	Logo	应用领域
WTE		/
页数	文件大小	规格书
6页	98K
描述
Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P6KE13C-T3-LF 数据手册

P6KE SERIES

600W TRANSIENT VOLTAGE SUPPRESSOR

WON-TOP ELECTRONICS

Features



Glass Passivated Die Construction



600W Peak Pulse Power Dissipation

5.5V – 513V Standoff Voltage

Uni- and Bi-Directional Versions Available

Excellent Clamping Voltage

Typical Response Time < 1nS

Plastic Case Material has UL Flammability

Classification Rating 94V-0

Mechanical Data



Case: DO-15, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band Except Bi-Directional

Weight: 0.40 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 6

DO-15

Dim

Min

25.4

5.50

0.71

2.60

Max

—



7.62

0.864

3.60

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Peak Pulse Power Dissipation on 10/1000µS Waveform (Note 1, 2, 5)

Peak Pulse Current on 10/1000µS Waveform (Note 1)

Peak Forward Surge Current (Note 2, 3)

PPPM

IPPM

IFSM

600

See Table 1

100

Maximum Instantaneous Forward Voltage at 50A (Note 3, 4)

Power Dissipation at T_L= 75°C (Note 2)

3.5 / 5.0

5.0

Typical Thermal Resistance, Junction to Ambient (Note 2)

Typical Thermal Resistance, Junction to Lead (Note 2)

RθJA

RθJL

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Non-repetitive current pulse per Figure 5 and derated above T_A= 25°C per Figure 1.

2. Mounted on 40 x 40 x 1.0mm thick copper pads to each terminal that maintained at a distance of 9.5mm from the case.

3. Measured on 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum. For uni-directional devices only.

4. V_F< 3.5V for V_BR≤ 200V and V_F< 5.0V for V_BR≥ 201V.

5. Peak pulse power waveform is 10/1000µS.

Revision: September, 2012

www.wontop.com

12 3 4 5 6

中文翻译

下载PDF

与P6KE13C-T3-LF相关器件

型号	品牌	获取价格	描述	数据表
P6KE13C-TB-LF	WTE	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P6KE13CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, PLA
P6KE13CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KE13CU11	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15
P6KE13CU13	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15
P6KE13CU16	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-15
P6KE13E3	MICROSEMI	获取价格	600 Watt TRANSIENT VOLTAGE SUPPRESSOR
P6KE13-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6KE13-E3/23	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
P6KE13-E3/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 10.5V V(RWM), Unidirectional, 1 Element, Silicon, DO

与P6KE13C-T3-LF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

P6KE13C-T3-LF

P6KE13C-T3-LF 数据手册

与P6KE13C-T3-LF相关器件

与P6KE13C-T3-LF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P6KE13C-T3-LF

P6KE13C-T3-LF 数据手册

与P6KE13C-T3-LF相关器件

与P6KE13C-T3-LF相关文章

您还可以找

您在本页遇到什么问题？