5秒后页面跳转
P6KA9.1-E3/54 PDF预览

P6KA9.1-E3/54

更新时间: 2024-11-26 14:44:07
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 356K
描述
Trans Voltage Suppressor Diode, 600W, 7.37V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN

P6KA9.1-E3/54 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-15
包装说明:ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.24
最大击穿电压:10 V最小击穿电压:8.19 V
击穿电压标称值:9.095 V外壳连接:ISOLATED
最大钳位电压:13.8 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ACJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:185 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:7.37 V
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

P6KA9.1-E3/54 数据手册

 浏览型号P6KA9.1-E3/54的Datasheet PDF文件第2页浏览型号P6KA9.1-E3/54的Datasheet PDF文件第3页浏览型号P6KA9.1-E3/54的Datasheet PDF文件第4页浏览型号P6KA9.1-E3/54的Datasheet PDF文件第5页 
P6KA6.8 thru P6KA43A  
Vishay General Semiconductor  
Automotive Transient Voltage Suppressors  
High Temperature Stability & High  
Reliability Conditions  
*
d
e
t
Major Ratings and Characteristics  
n
e
t
a
V(BR)  
PPPM  
PD  
6.8 V to 43 V  
P
600 W  
5.0 W  
*Patent#'s  
4,980,315  
5,166,769  
5,278,094  
DO-204AC (DO-15)  
IFSM  
75 A  
Tj max.  
185 °C  
Features  
• Patented PAR construction  
• Available in Unidirectional polarity only  
Mechanical Data  
Case: DO-204AC, molded epoxy over passivated  
junction  
®
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
• 600 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Typical I less than 1.0 µA above 10 V rating  
D
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Typical Applications  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor units  
for consumer, computer, industrial, automotive, and  
Telecommunication.  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
Unit  
W
Peak pulse power dissipation with a 10/1000 µs (1) (Fig. 1)  
Minimum 600  
Pulse pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)  
IPPM  
PD  
see next table  
A
W
A
5.0  
75  
Peak forward surge current, 8.3 ms single half sine-wave (2)  
IFSM  
Maximum instantaneous forward voltage at 50 A (2)  
Operating junction and storage temperature range  
VF  
3.5  
V
TJ, TSTG  
- 65 to + 185  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum  
Document Number 88368  
22-Dec-05  
www.vishay.com  
1

与P6KA9.1-E3/54相关器件

型号 品牌 获取价格 描述 数据表
P6KCE30CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE30CAE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 25.6V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE30CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 24.3V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE30CE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 24.3V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE33CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE33CAE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE33CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE33CE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE36CAE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH
P6KCE36CE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH