是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.8 | 最大击穿电压: | 31.5 V |
最小击穿电压: | 28.5 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 25.6 V | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | MATTE TIN |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P6KCE30CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 24.3V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE30CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 24.3V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE33CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE33CAE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE33CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE33CE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 26.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE36CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 30.8V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE36CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 29.1V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE39CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 33.3V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
P6KCE39CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 31.6V V(RWM), Bidirectional, 1 Element, Silicon, ROH |