DATA SHEET
SEMICONDUCTOR
P4SMAJ Series
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 5.0 to 440 Volts 400 Watt Peak Power Pulse
SMA/DO-214AC Unit:inch(mm)
FEATURES
.062(1.60)
ΘFor surface mounted applications in order to optimize board space.
.047(1.20)
ΘLow profile package
ΘBuilt-in strain relief
.114(2.90)
.098(2.50)
ΘGlass passivated junction
ΘExcellent clamping capability
ΘLow inductance
(4.60)
.181
.157(4.00)
ΘFast response time: typically less than 1.0 ps from 0 volts to BV min
ΘTypical IR less than 1µA above 10V
ΘHigh temperature soldering : 250°C/10 seconds at terminals.
ΘPlastic package has Underwriters Laboratory Flammability
096(2.44)
.078(2.00)
.
Classification 94V-O
ΘHigh temperature soldering : 260OC / 10 seconds at terminals
ΘPb free product at available : 99% Sn above meet RoHS
environment substance directive request
.012(.305)
.006(.152)
)
.008(.203
.002(.051)
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
MECHANICAL DATA
ΘCase: JEDEC DO-214AC low profile molded plastic
ΘTerminals: Solder leads, solderable per MIL-STD-750, Method 2026
ΘPolarity: Indicated by cathode band except Bi-directional types.
ΘStandard Packageing: 12mm tape per(EIA-481)
ΘWeight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
RATING
Peak Power Dissipation at TA=25°C, TP=1ms(Note 1,2,5)Fig.1
Peak Forward Surge Current, per Figure 5(Note 3)
Peak Pulse Current Current on 10/1000µs waveform(Note
1,2,5)Fig.2
SYMBOL
PPPM
VALUE
Minimum 400
40.0
UNITS
Watts
Amps
IFSM
IPPM
See Table 1
Amps
Steady State Power Dissipation(Note 4)
Operating and Storage Temperature Range
NOTES:
PM(AV)
1.0
Watts
°C
TJ, TSTG
-55 to +150
1.Non-repetitive current pulse, per Fig. 3 and derated above TA=25°Cper Fig. 2.
2.Mounted on 5.0mm2 Copper pads to each terminal.
3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
4.lead temperature at 75°C=TL.
5.Peak pluse power waveformis 10/1000µS.
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REV.03 20130403