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P4SMA8.2A PDF预览

P4SMA8.2A

更新时间: 2024-11-08 22:58:31
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 144K
描述
Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors

P4SMA8.2A 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.11
Is Samacsys:N其他特性:UL RECOGNIZED
最大击穿电压:8.61 V最小击穿电压:7.79 V
击穿电压标称值:8.2 V最大钳位电压:12.1 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:3.3 W
认证状态:Not Qualified最大重复峰值反向电压:7.02 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

P4SMA8.2A 数据手册

 浏览型号P4SMA8.2A的Datasheet PDF文件第2页浏览型号P4SMA8.2A的Datasheet PDF文件第3页浏览型号P4SMA8.2A的Datasheet PDF文件第4页 
Silicon Avalanche Diodes  
400W Surface Mount Transient Voltage Supressors  
RoHS  
P4SMA Series  
FEATURES  
RoHS compliant  
For surface mounted applications in order to optimize  
board space  
Low profile package  
Built-in strain relief  
Glass passivated junction  
Low Inductance  
Excellent clamping capability  
Repetition Rate (duty cycle):0.01%  
Fast response time: typically less than 1.0ps from 0 Volts to  
V(BR) for unidirectional types  
Typical IR less than 1µA above 10V  
MAXIMUM RATINGS AND CHARACTERISTICS  
High temperature soldering: 250˚C/10 seconds at terminals  
DEVICES FOR BIPOLAR APPLICATION  
@25˚C AMBIENT TEMPERATURE (unless otherw ise noted)  
For Bidirectional use Suffix CA for types P4SMA6.8CA thru types  
P4SMA550CA  
PARAMETER  
VALUE  
SYMBOL  
UNIT  
Peak pulse power Dissipation on  
10/1000µs waveform (Note 1.2,FIG.1)  
P
Watts  
Min  
400  
PPM  
Electrical characteristics apply in both directions  
Peak pulse current of on 10/1000µs  
waveform (Note 1, FIG.3)  
I
See Table 1  
PPM  
Amps  
Amps  
Agency Approvals: Recognized under the Components Program  
of Underwriters Laboratories.  
Peak Forward Surge Current,  
8.3ms Single Half Sine-Wave  
Superimposed on Rated Load,  
(JEDEC Method)(Note2,3)  
Agency File Numbers: E128667  
I
40  
FSM  
ORDERING INFORMATION  
Operating junction and Storage  
Temperature Range  
T
T
°C  
-55 to +150  
C A  
P4SMA  
j, sTG  
Voltage  
Notes:  
1. Non-repetitive current pulse, per Fig.3 and derated above  
Bi-Directional  
5%Voltage Tolerance  
T = 25˚C per Fig.2  
A
2. Mounted on 5.0mm2 (0.03mm thick) Copper Pads to each  
terminal  
3. 8.3ms single half sine-wave, or equivalent square wave,  
Duty cycle = 4 pulses per minutes maximum  
T = Tape and reeled (5000pcs)  
Mechanical Specifications:  
Weight:  
Case:  
0.002 ounce, 0.061 gram  
JEDEC DO214AC. Molded plastic over  
glass passivated junction  
Any  
Color band denoted positive end  
(cathode) except Bidirectional  
Solder plated, solderable per MIL-STD-  
750, Method 2026  
Mounting Position:  
Polarity:  
Terminal:  
Standard Packaging: 12mm tape (EIA STD RS-481)  
258  
www. lit t elf us e. c om  

P4SMA8.2A 替代型号

型号 品牌 替代类型 描述 数据表
P4SMA8.2AHE3/61 VISHAY

类似代替

TVS DIODE 7.02V 12.1V DO214AC
P4SMA8.2A-E3/5A VISHAY

类似代替

DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
SMAJ70A LITTELFUSE

功能相似

Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors

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