Datasheet > P4SMA33A

P4SMA33A

更新时间： 2024-11-06 05:59:07

品牌	Logo	应用领域
威世 - VISHAY		二极管光电二极管局域网
页数	文件大小	规格书
5页	110K
描述
Surface Mount TRANSZORB® Transient Voltage Suppressors

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中文翻译

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数据手册

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P4SMA33A 数据手册

P4SMA Series

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 % (300 W above 91 V)

• Excellent clamping capability

• Very fast response time

DO-214AC (SMA)

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_BRuni-directional

6.8 V to 540 V

6.8 V to 220 V

400 W, 300 W

3.3 W

Use in sensitive electronics protection against

voltage transients induced by inductive load switching

and lighting on ICs, MOSFET, signal lines of

sensor units for consumer, computer, industrial and

telecommunication.

_BRbi-directional

P_PPM

P_D

I_FSM(uni-directional only)

T_Jmax.

40 A

150 °C

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g.

P4SMA10CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

400

UNIT

Peak power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾(Fig. 3)

Power dissipation on infinite heatsink, T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

See next table

3.3

P_D

I_FSM

T_J, T_STG

- 65 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2. Rating is 300 W above 91 V

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88367

Revision: 21-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与P4SMA33A相关器件

型号	品牌	获取价格	描述	数据表
P4SMA33A/11	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4SMA33A/51	VISHAY	获取价格	Transient Suppressor,
P4SMA33A/5A-E3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient
P4SMA33A/61-E3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient
P4SMA33A/TR7	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P4SMA33A-AT	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P4SMA33A-AU	PANJIT	获取价格	SMA
P4SMA33AAUTO	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 400W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4SMA33A-E3	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient
P4SMA33A-E3/5A	VISHAY	获取价格	TVS DIODE 28.2V 45.7V DO214AC

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