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P4SMA13A-E3/5A

更新时间： 2024-11-23 22:46:51
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
6页 102K
描述
TVS DIODE 11.1V 18.2V DO214AC

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中文翻译

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P4SMA13A-E3/5A 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AC
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.29
其他特性：EXCELLENT CLAMPING CAPABILITY最大击穿电压：13.7 V
最小击穿电压：12.4 V击穿电压标称值：13 V
最大钳位电压：18.2 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ACJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：400 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：3.3 W认证状态：Not Qualified
最大重复峰值反向电压：11.1 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30

P4SMA13A-E3/5A 数据手册

 浏览型号P4SMA13A-E3/5A的Datasheet PDF文件第2页浏览型号P4SMA13A-E3/5A的Datasheet PDF文件第3页浏览型号P4SMA13A-E3/5A的Datasheet PDF文件第4页浏览型号P4SMA13A-E3/5A的Datasheet PDF文件第5页浏览型号P4SMA13A-E3/5A的Datasheet PDF文件第6页 
P4SMA Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface-Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in unidirectional and bidirectional  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 % (300 W above 91 V)  
Available  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
SMA (DO-214AC)  
Cathode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
(unidirectional)  
(bidirectional)  
• AEC-Q101 qualified available  
- Automotive ordering code: P/NHE3 or P/NHM3  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
PRIMARY CHARACTERISTICS  
VWM (unidirectional)  
WM (bidirectional)  
BR (unidirectional)  
5.8 V to 459 V  
V
5.8 V to 185 V  
6.8 V to 540 V  
6.8 V to 220 V  
400 W, 300 W  
3.3 W  
MECHANICAL DATA  
V
Case: SMA (DO-214AC)  
VBR (bidirectional)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
PPPM  
PD  
IFSM (uni-directional only)  
40 A  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
TJ max.  
150 °C  
Polarity  
Unidirectional, bidirectional  
SMA (DO-214AC)  
(“_X” denotes revision code e.g. A, B, ...)  
Package  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
DEVICES FOR BIDIRECTION APPLICATIONS  
For bidirectional devices use CA suffix (e.g. P4SMA10CA).  
Electrical characteristics apply in both directions.  
Polarity: for unidirectional types the band denotes cathode  
end, no marking on bidirectional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
400  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
3.3  
A
PD  
W
IFSM  
40  
A
TJ, TSTG  
-65 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. Rating is 300 W above 91 V  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 30-Jun-2021  
Document Number: 88367  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

中文翻译

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P4SMA13A-E3/5A 替代型号

型号 品牌 替代类型 描述 数据表
TPSMA13AHE3_A/I VISHAY

完全替代

 TVS DIODE 11.1V 18.2V DO214AC
TPSMA13AHE3_A/H VISHAY

完全替代

 Trans Voltage Suppressor Diode, 400W, 11.1V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4SMA13A-E3/61 VISHAY

完全替代

 DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2

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 		TVS DIODE 11.1V 18.2V DO214AC
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