Datasheet > P4KE8.2

P4KE8.2

更新时间： 2024-11-04 04:35:23

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
5页	732K
描述
POWER 400Watts VOLTAGE 6.8 to 440 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P4KE8.2 数据手册

POWER 400Watts

VOLTAGE 6.8 to 440 Volts

P4KE6.8 THRU P4KE440CA

Features

· Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

· Glass passivated junction

DO-41

· 400W peak pulse power capability with a 10/100μS

waveform, reptition rate(duty cycle) : 0.01%

· Excellent clamping capability

0.107(2.7)

0.080(2.0)

DIA.

· Low incremental surge resistance

· Fast response time : typically less than 1.0ps from 1 Volts to

1.0(25.4)

MIN.

(BR) for uni-directional and 5.0ns for Bi-directional types

· Devices with V(BR) 10V, I

are typically less than 1.0

μA

· High temperature soldering guaranteed : 265

0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension

℃

/10seconds,

0.205(5.2)

0.166(4.2)

Mechanical Data

· Case : DO-41 molded plastic body over passivated junction

· Terminals : Solder plated axial leads, solderable per

MIL-STD-750, method 2026

· Polarity : For uni-directional types the color band denotes

cathode end. which is positive with respect to the

anode under normal TVS operation

1.0(25.4)

MIN.

0.034(0.9)

0.028(0.7)

DIA.

Dimensions in inches and (millimeters)

· Mounting Position : Any

· Weight : 0.012 ounce, 0.34 gram

Devices For Bidirectional Applications

· For bi-directional use C or CA suffix for types P4KE7.5 thru types P4KE440CA(e.g. P4KE10C, P4KE220CA),

electrical characteristics apply in both directions.

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Values

Units

Peak power dissipation with a 10/100μS waveform (Note 1. Fig. 3)

Peak pulse current with a 10/100μS waveform (Note 1)

PPM

M(AV)

Min.400

Watts

See Table 1

1.0

Amps

Watts

Steady state power dissipation at T

L=75℃ lead length 0.375"(9.5mm) (Note2)

Peak forward surge current, 8.3mm single half sine-wave superimposed on

rated load(JEDEC method) (Note 3)

FSM

40.0

Amps

Maximum instantaneous forward voltage at 25A for unidirectional only(Note4)

Operating junction and storage temperature range

3.5/50

Volts

℃

,TSTG

-55 to +175

Notes:

(1) Non repetitive current pulse, per Fig.3 and derated above T

(2) Mounted on copper pads area of 1.6×1.6"(40×40mm) per Fig.5

(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum

(4) V =3.5 Volts max. for devices of V(BR)≤220V, and V =5.0 Volts max. for devices of V(BR)>220V

A=25℃ per Fig.2

12 3 4 5

中文翻译

下载PDF

与P4KE8.2相关器件

型号	品牌	获取价格	描述	数据表
P4KE-8.2	FCI	获取价格	6.8V to 400V GPP TRANSIENT VOLTAGE SUPPRESSORS
P4KE8.2(C)	GOOD-ARK	获取价格	TVS
P4KE8.2(C)A	GOOD-ARK	获取价格	TVS
P4KE8.2/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-204AL
P4KE8.2/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 6.63V V(RWM), Unidirectional,
P4KE8.2A	TRSYS	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
P4KE8.2A	DIOTEC	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor Diodes
P4KE8.2A	LITTELFUSE	获取价格	Silicon Avalanche Diodes - 400W Axial Leaded Transient Voltage Supressors
P4KE8.2A	SEMIKRON	获取价格	Unidirectional and bidirectional Transient Voltage Suppressor diodes
P4KE8.2A	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

与P4KE8.2相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

33
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE8.2

P4KE8.2 数据手册

与P4KE8.2相关器件

与P4KE8.2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE8.2

P4KE8.2 数据手册

与P4KE8.2相关器件

与P4KE8.2相关文章

您还可以找

您在本页遇到什么问题？