Datasheet > P4KE75A

P4KE75A

更新时间： 2024-11-04 05:59:03

品牌	Logo	应用领域
MDE		二极管局域网
页数	文件大小	规格书
3页	73K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P4KE75A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

P4KE SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE - 6.8 TO 550 Volts

400 Watt Peak Pulse Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

• Glass passivated chip junction in DO-41 package

• 400W surge capability at 1ms

• Excellent clamping capability

• Low zener impedance

• Low incremental surge resistance

• Excellent clamping capability

• Fast response time: typically less than

1.0 ps from 0 volts to BV min

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

300°C/10 seconds/ .375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-41 Molded plastic

Terminals: Axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.012 ounces, 0.3 grams

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types P4KE6.80 thru types P4KE550 (e.g. P4KE6.8C, P4KE550CA)

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For Capacitive load, derate current by 20%

RATING

SYMBOL

P_PPM

VALUE

Minimum 400

SEE TABLE 1

1.0

UNITS

Watts

Amps

Watts

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms

(NOTE 1)

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

Lead lengths .375", 9.5mm (Note 2)

P_M(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

Operatings and Storage Temperature Range

NOTES:

I_FSM

Amps

°C

T_J, T_STG

-55 +175

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on Copper Pad area of 1.6x1.6" (40x40mm) per Fig.5.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

下载PDF

与P4KE75A相关器件

型号	品牌	获取价格	描述	数据表
P4KE-75A	FCI	获取价格	6.8V to 400V GPP TRANSIENT VOLTAGE SUPPRESSORS
P4KE75A / CA	SWST	获取价格	瞬态电压抑制管
P4KE75A/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-204AL
P4KE75A/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 64.1V V(RWM), Unidirectional,
P4KE75A/B	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P4KE75A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P4KE75AB	LITTELFUSE	获取价格	400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLAST
P4KE75A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
P4KE75A-B	RECTRON	获取价格	Transient Suppressor
P4KE75A-BP	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 64.1V V(RWM), Unidirectional, 1 Element, Silicon, DO

与P4KE75A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

33
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE75A

P4KE75A 数据手册

与P4KE75A相关器件

与P4KE75A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE75A

P4KE75A 数据手册

与P4KE75A相关器件

与P4KE75A相关文章

您还可以找

您在本页遇到什么问题？