Datasheet > P4KE51A

P4KE51A

更新时间： 2024-11-21 05:53:27

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
4页	240K
描述
Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P4KE51A 数据手册

P4KE6.8 thru P4KE550CA

Transient Voltage Suppressors

Peak Pulse Power 400W Breakdown Voltage 6.8 to 550V

Features

ꢀ Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

ꢀ Glass passivated junction

ꢀ 400W peak pulse power capabililty on 10/1000uS waveform,

repetition rate (duty cycle): 0.01%

ꢀ Excellent clamping capability

ꢀ Low incremental surge resistance

ꢀ Very fast response time

ꢀ High temperature soldering guaranteed: 265^oC/10 seconds,

0.375” (9.5mm) lead length, 5lbs. (2.3 kg) tension

Mechanical Data

ꢀ Case: JEDEC DO-204AL(DO-41) molded plastic body over

passivated junction

ꢀ Terminals: Axial leads, solderable per MIL-STD-750,

Method 2026

ꢀ Polarity: For unidirectional types the color band denotes the

cathode, which is positive with respect to the anode under

normal TVS operation

ꢀ Mounting Position: Any

ꢀ Weight: 0.012oz., 0.3g

Devices for Bidirectional Applications

For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440

(e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions.

Maximum Ratings and Characteristics

(T_A=25^oC unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak power dissipation with a 10/1000us waveform ⁽¹⁾

(Fig. 1)

P_PPM

I_PPM

Minimum 400

See Next Table

1.0

Peak pulse current with a 10/1000us waveform ⁽¹⁾

Steady state power dissipation

P_M(AV)

at T_L=75^oC, lead lengths 0.375" (9.5mm) ⁽²⁾

Peak forward surge current, 8.3ms

I_FSM

V_F

single half sine-wave unidirectional only ⁽³⁾

Maximum instantaneous forward voltage

at 25A for unidirectional only ⁽⁴⁾

3.5/5.0

Volts

Typical thermal resistance junction-to-lead

R_θJL

R_θJA

100

^oC/W

^oC

Typ. thermal resistance junction-to-ambient, L_Lead=10mm

Operating junction and storage temperature range

T_J, T_STG

-55 to +175

Notes:

1. Non-repetitive current pulse, per Fig.3 and derated above T_A=25^oC per Fig. 2

2. Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

4. V_F=3.5 V for devices of V_(BR)220V, and V_F=5.0 Volt max. for devices of V_(BR)>220V

565

12 3 4

中文翻译

下载PDF

与P4KE51A相关器件

型号	品牌	获取价格	描述	数据表
P4KE-51A	FCI	获取价格	6.8V to 400V GPP TRANSIENT VOLTAGE SUPPRESSORS
P4KE51A / CA	SWST	获取价格	瞬态电压抑制管
P4KE51A/B	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P4KE51A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P4KE51AB	LITTELFUSE	获取价格	400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLAST
P4KE51A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
P4KE51A-B	FRONTIER	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon
P4KE51A-BP	MCC	获取价格	暂无描述
P4KE51A-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE51A-C	SECOS	获取价格	400 Peak Power

与P4KE51A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

30
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

49

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE51A

P4KE51A 数据手册

与P4KE51A相关器件

与P4KE51A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE51A

P4KE51A 数据手册

与P4KE51A相关器件

与P4KE51A相关文章

您还可以找

您在本页遇到什么问题？