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P4KE51AB

更新时间： 2024-11-21 17:27:31
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管电视
页数 文件大小 规格书
6页 1005K
描述
400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

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中文翻译

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P4KE51AB 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-41
包装说明：O-PALF-W2针数：2
Reach Compliance Code：compliant风险等级：5.13
其他特性：LOW IMPEDANCE最大击穿电压：53.6 V
最小击穿电压：48.5 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-204AL
JESD-30 代码：O-PALF-W2JESD-609代码：e3
湿度敏感等级：2最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：1 W
认证状态：Not Qualified最大重复峰值反向电压：43.6 V
表面贴装：NO技术：AVALANCHE
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

P4KE51AB 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 400W > P4KE series  
RoHS  
P4KE Series  
Description  
The P4KE Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Uni-directional  
Features  
• VBR @TJ= VBR@25°C × (1+αT  
x (TJ - 25))  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
(αT:Temperature Coefficient)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
• Low incremental surge  
resistance  
• Glass passivated chip  
junction in DO-41 Package  
• 400W peak pulse  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
• Typical IR less than 1μA  
above 13V  
• High temperature  
soldering guaranteed:  
260°C/40 seconds /  
0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• Plastic package has  
underwriters laboratory  
flammability classification  
94V-O  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
• Excellent clamping  
capability  
Parameter  
Symbol  
PPPM  
Value  
400  
Unit  
W
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1)  
Steady State Power Dissipation on  
Inifinite Heat Sink atTL=75ºC (Fig. 6)  
PD  
1.5  
40  
W
A
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
Maximum Instantaneous Forward  
Voltage at 25A for Unidirectional  
Only (Note 3)  
IFSM  
15kV(Air), 8kV (Contact)  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
Applications  
TJ, TSTG -55 to 150  
°C  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
computer, industrial and consumer electronic applications.  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
60  
°C/W  
°C/W  
V
TypicalThermal Resistance Junction  
to Ambient  
100  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25°C per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
3. VF<3.5V for devices of VBR<_ 200V and VF<5.0V for devices of VBR>_ 201V.  
Functional Diagram  
Additional Information  
Datasheet  
Resources  
Samples  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2014 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 01/24/14  
123456

中文翻译

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