Datasheet > P4KE51A

P4KE51A

更新时间： 2024-11-21 04:35:27

品牌	Logo	应用领域
DAESAN		/
页数	文件大小	规格书
5页	732K
描述
POWER 400Watts VOLTAGE 6.8 to 440 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

P4KE51A 数据手册

POWER 400Watts

VOLTAGE 6.8 to 440 Volts

P4KE6.8 THRU P4KE440CA

Features

· Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

· Glass passivated junction

DO-41

· 400W peak pulse power capability with a 10/100μS

waveform, reptition rate(duty cycle) : 0.01%

· Excellent clamping capability

0.107(2.7)

0.080(2.0)

DIA.

· Low incremental surge resistance

· Fast response time : typically less than 1.0ps from 1 Volts to

1.0(25.4)

MIN.

(BR) for uni-directional and 5.0ns for Bi-directional types

· Devices with V(BR) 10V, I

are typically less than 1.0

μA

· High temperature soldering guaranteed : 265

0.375"(9.5mm) lead length, 5lbs. (2.3kg) tension

℃

/10seconds,

0.205(5.2)

0.166(4.2)

Mechanical Data

· Case : DO-41 molded plastic body over passivated junction

· Terminals : Solder plated axial leads, solderable per

MIL-STD-750, method 2026

· Polarity : For uni-directional types the color band denotes

cathode end. which is positive with respect to the

anode under normal TVS operation

1.0(25.4)

MIN.

0.034(0.9)

0.028(0.7)

DIA.

Dimensions in inches and (millimeters)

· Mounting Position : Any

· Weight : 0.012 ounce, 0.34 gram

Devices For Bidirectional Applications

· For bi-directional use C or CA suffix for types P4KE7.5 thru types P4KE440CA(e.g. P4KE10C, P4KE220CA),

electrical characteristics apply in both directions.

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified)

Symbols

Values

Units

Peak power dissipation with a 10/100μS waveform (Note 1. Fig. 3)

Peak pulse current with a 10/100μS waveform (Note 1)

PPM

M(AV)

Min.400

Watts

See Table 1

1.0

Amps

Watts

Steady state power dissipation at T

L=75℃ lead length 0.375"(9.5mm) (Note2)

Peak forward surge current, 8.3mm single half sine-wave superimposed on

rated load(JEDEC method) (Note 3)

FSM

40.0

Amps

Maximum instantaneous forward voltage at 25A for unidirectional only(Note4)

Operating junction and storage temperature range

3.5/50

Volts

℃

,TSTG

-55 to +175

Notes:

(1) Non repetitive current pulse, per Fig.3 and derated above T

(2) Mounted on copper pads area of 1.6×1.6"(40×40mm) per Fig.5

(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulse per minute maximum

(4) V =3.5 Volts max. for devices of V(BR)≤220V, and V =5.0 Volts max. for devices of V(BR)>220V

A=25℃ per Fig.2

12 3 4 5

中文翻译

下载PDF

与P4KE51A相关器件

型号	品牌	获取价格	描述	数据表
P4KE-51A	FCI	获取价格	6.8V to 400V GPP TRANSIENT VOLTAGE SUPPRESSORS
P4KE51A / CA	SWST	获取价格	瞬态电压抑制管
P4KE51A/B	YAGEO	获取价格	Trans Voltage Suppressor Diode,
P4KE51A-AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
P4KE51AB	LITTELFUSE	获取价格	400W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLAST
P4KE51A-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
P4KE51A-B	FRONTIER	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon
P4KE51A-BP	MCC	获取价格	暂无描述
P4KE51A-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 43.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
P4KE51A-C	SECOS	获取价格	400 Peak Power

与P4KE51A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

30
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

49

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE51A

P4KE51A 数据手册

与P4KE51A相关器件

与P4KE51A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

P4KE51A

P4KE51A 数据手册

与P4KE51A相关器件

与P4KE51A相关文章

您还可以找

您在本页遇到什么问题？