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P4KE510C

更新时间： 2024-11-21 19:26:31
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
6页 1079K
描述
Trans Voltage Suppressor Diode, 400W, 434V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, DO-41, 2 PIN

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中文翻译

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P4KE510C 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.55其他特性：EXCELLENT CLAMPING CAPABILITY
最大击穿电压：535 V最小击穿电压：485 V
击穿电压标称值：510 V外壳连接：ISOLATED
最大钳位电压：698 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-204ALJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM极性：BIDIRECTIONAL
最大功率耗散：1.5 W参考标准：IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压：434 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：WIRE
端子位置：AXIALBase Number Matches：1

P4KE510C 数据手册

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TransientVoltage Suppression Diodes  
Axial Leaded – 400W > P4KE series  
Pb e3  
RoHS  
P4KE Series  
Description  
Bi-directional  
The P4KE Series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Uni-directional  
Features  
• 400W peak pulse  
• Typical IR less than 1μA  
when VBR min>12V  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Glass passivated chip  
junction in DO-41 Package  
• Fast response time:  
typically less than 1.0ps  
from 0 Volts to BV min  
• Excellent clamping  
capability  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
• High temperature  
to reflow soldering  
guaranteed: 260°C/40sec  
/ 0.375”,(9.5mm) lead  
length, 5 lbs., (2.3kg)  
tension  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Plastic package is  
flammability rated V-0 per  
Underwriters Laboratories  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
400  
Unit  
W
Peak Pulse Power Dissipation by  
10/1000μsTest Waveform (Fig.2)  
(Note 1), (Note 4)  
JESD201A per its table 4a  
and 4c  
• IEC-61000-4-2 ESD  
Steady State Power Dissipation on  
Infinite Heat Sink atTL=75ºC  
PD  
1.5  
60  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave Unidirectional  
Only (Note 2)  
30kV(Air), 30kV (Contact) • Pb-free E3 means 2nd  
IFSM  
level interconnect is  
Pb-free and the terminal  
finish material is tin(Sn)  
(IPC/JEDEC J-STD-  
609A.01)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4  
Maximum Instantaneous Forward  
Voltage at 25A for Unidirectional  
Only (Note 3)  
VF  
3.5/5.0  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 175 °C  
TypicalThermal Resistance Junction  
to Lead  
°C/W  
RθJL  
RθJA  
60  
• Low incremental surge  
resistance  
TypicalThermal Resistance Junction  
to Ambient  
°C/W  
100  
Notes:  
Applications  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTJ (initial) =25OC per Fig. 3.  
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per  
minute maximum.  
TVS devices are ideal for the protection of I/O interfaces,  
CC bus and other vulnerable circuits used in telecom,  
V
3. VF < 3.5V for single die parts and VF< 5.0V for stacked-die parts.  
computer, industrial and consumer electronic applications.  
4. The PPPM of stacked-die parts is 600W and please contact littelfuse for the detail  
stacked-die parts.  
Functional Diagram  
Additional Infomarion  
Bi-directional  
Datasheet  
Samples  
Resources  
Cathode  
Anode  
Uni-directional  
© 2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/20/15  
123456

中文翻译

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