DATA SHEET
SEMICONDUCTOR
P4KE Series
GLASS PASSIVATED JUNCTION
TRANSIENT VOLTAGE SUPPRESSOR
400 Watt Peak Power 1.0 Watt Steady
State VOLTAGE- 6.8 to 540 Volts
FEATURES
DO-41
Unit:inch(mm)
‧ Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
‧ Glass passivated chip junction in DO-41 package
‧ 600W surge capability at 1ms
‧ Excellent clamping capability
.107 (2.7)
.080 (2.0)
DIA.
1.0 (25.4)
MIN.
‧ Low zener impedance
‧ Fast response time: typically less than 1.0 ps from 0 volts to BV min
‧ Typical IR less than 1µA above 10V
‧ High temperature soldering guaranteed: 260°C/10 seconds/.375",(9.5mm) lead
length/5lbs., (2.3kg) tension
.205 (5.2)
.160 (4.1)
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
1.0 (25.4)
MECHANICAL DATA
MIN.
.034 (.86)
.028 (.71)
DIA.
‧ Case: JEDEC DO-41 Molded plastic
‧ Terminals: Axial leads, solderable per MIL-STD-202, Method 208
‧ Polarity: Color band denoted cathode except Bipolar
‧ Mounting Position: Any
‧ Weight: 0.012 ounce, 0.34 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
RATING
Peak Power Dissipation at TA=25°C, TP=1ms(Note 1)
Steady State Power Dissipation at TL=75°CLead
Lengths .375",(9.5mm)
SYMBOL
VALUE
UNITS
PPK
Minimum 400
Watts
PD
1.0
Watts
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-Wave
Superimposed
IFSM
40
Amps
°C
on Rated Load(JECED Method) (Note 3)
Operating and Storage Temperature Range
NOTES:
TJ, TSTG
-55 to +150
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2.
2. Mounted on Copper Leaf area of 1.57 in2 (40mm2).
3. 8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.
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1
REV.02 20120403