Datasheet > P4KE150CAB

P4KE150CAB

更新时间： 2024-11-05 07:55:31

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	1005K
描述
400W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

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中文翻译

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P4KE150CAB 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 400W > P4KE series

RoHS

P4KE Series

Description

The P4KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Uni-directional

Features

• V_BR@T_J= V_BR@25°C × (1+αT

x (T_J- 25))

• ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in DO-41 Package

• 400W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

• Typical I_Rless than 1μA

above 13V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

Parameter

Symbol

P_PPM

Value

400

Unit

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Iniﬁnite Heat Sink atT_L=75ºC (Fig. 6)

P_D

1.5

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 25A for Unidirectional

Only (Note 3)

I_FSM

15kV(Air), 8kV (Contact)

V_F

3.5/5.0

Operating Junction and Storage

Temperature Range

Applications

T_J, T_STG-55 to 150

°C

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

100

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_A= 25°C per Fig. 3.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F<5.0V for devices of V_BR>_ 201V.

Functional Diagram

Additional Information

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 01/24/14

12 3 4 5 6

中文翻译

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与P4KE150CAB相关器件

型号	品牌	获取价格	描述	数据表
P4KE150CA-B	LITTELFUSE	获取价格	Transient Voltage Suppression Diodes
P4KE150CA-BP-HF	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Bidirectional, 1 Element, Silicon, DO-4
P4KE150CA-C	SECOS	获取价格	400 Peak Power
P4KE150CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P4KE150CA-E3/54	VISHAY	获取价格	TVS DIODE 128V 207V DO204AL
P4KE150CA-E3/73	VISHAY	获取价格	TVS DIODE 128V 207V DO204AL
P4KE150CAE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 128V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
P4KE150CAE3TR	MICROSEMI	获取价格	400W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, PLASTIC, DO-41, 2 PIN
P4KE150CA-G	COMCHIP	获取价格	400W Transient Voltage Suppressor
P4KE150CAH02	RECTRON	获取价格	Trans Voltage Suppressor Diode, Bidirectional, 1 Element, Silicon, DO-41,

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