P4C167L-35LM

更新时间： 2024-01-17 10:04:05

品牌	Logo	应用领域
PYRAMID		存储内存集成电路静态存储器
页数	文件大小	规格书
10页	192K
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P4C167L-35LM 数据手册

P4C167

MAXIMUM RATINGS⁽¹⁾

Symbol

Parameter

Value

Unit

Symbol

Parameter

Value

Unit

T_BIAS

Temperature Under

Bias

–55 to +125

°C

V_CC

Power Supply Pin with

Respect to GND

–0.5 to +7

T_STG

P_T

I_OUT

Storage Temperature

Power Dissipation

DC Output Current

–65 to +150

°C

Terminal Voltage with

Respect to GND

(up to 7.0V)

–0.5 to

V_TERM

T_A

V_CC+0.5

1.0

Operating Temperature –55 to +125 °C

RECOMMENDED OPERATING

CAPACITANCES⁽⁴⁾

V_CC= 5.0V, T_A= 25°C, f = 1.0MHz

TEMPERATURE AND SUPPLY VOLTAGE

Ambient

Symbol

Parameter

Conditions Typ. Unit

V_CC

Grade(2)

GND

Temperature

Military

Industrial

Commercial

5.0V ± 10%

C_IN

C_OUT

V_IN= 0V

–55°C to +125°C

–40°C to +85°C

0°C to +70°C

Input Capacitance

Output Capacitance

_OUT= 0V

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage⁽²⁾

P4C167

P4C167L

Symbol

Parameter

Test Conditions

Unit

Min

Max

Min

Max

Input High Voltage

2.2

–0.5⁽³⁾

_CC+0.5

2.2

–0.5⁽³⁾

_CC+0.5

V_IH

V_IL

V_HC

Input Low Voltage

0.8

V_CC–0.2 V_CC+0.5 V_CC–0.2 V_CC+0.5

–0.5⁽³⁾

CMOS Input High Voltage

CMOS Input Low Voltage

Input Clamp Diode Voltage

0.2

–0.5(3)

0.2

V_LC

V_CD

V_CC= Min., I_IN= –18 mA

I_OL= +8 mA, V_CC= Min.

–1.2

Output Low Voltage

V_OL

V_OH

I_LI

0.4

(TTL Load)

Output High Voltage

(TTL Load)

I_OH= –4 mA, V_CC= Min.

2.4

V_CC= Max.

Mil.

Com’l.

Mil.

–10

–5

+10

–5

µA

Input Leakage Current

n/a

V_IN= GND to V_CC

V_CC= Max., CE = V_IH,

V_OUT= GND to V_CC

–10

–5

+10

–5

I_LO

Output Leakage Current

µA

n/a

Com’l.

___

CE ≥ V_IH

Mil.

Standby Power Supply

___

I_SB

n/a

V_CC= Max .,

Ind./Com’l.

Current (TTL Input Levels)

f = Max., Outputs Open

___

1.0

n/a

CE ≥ V_HC

Mil.

Ind./Com’l.

Standby Power Supply

Current

V_CC= Max.,

I_SB1

f = 0, Outputs Open

V_IN≤ V_LCor V_IN≥ V_HC

(CMOS Input Levels)

n/a = Not Applicable

Notes:

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V_ILand I_ILnot more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

Document # SRAM106 REV A

Page 2 of 10

123 4 5 6 7...10

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