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P4C164-15DC PDF预览

P4C164-15DC

更新时间: 2024-11-18 21:17:03
品牌 Logo 应用领域
PYRAMID 静态存储器内存集成电路
页数 文件大小 规格书
16页 1239K
描述
Standard SRAM, 8KX8, 15ns, CMOS, CDIP28, 0.300 INCH, CERAMIC, DIP-28

P4C164-15DC 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5
Is Samacsys:N最长访问时间:15 ns
JESD-30 代码:R-CDIP-T28JESD-609代码:e0
长度:36.449 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:5.715 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

P4C164-15DC 数据手册

 浏览型号P4C164-15DC的Datasheet PDF文件第2页浏览型号P4C164-15DC的Datasheet PDF文件第3页浏览型号P4C164-15DC的Datasheet PDF文件第4页浏览型号P4C164-15DC的Datasheet PDF文件第5页浏览型号P4C164-15DC的Datasheet PDF文件第6页浏览型号P4C164-15DC的Datasheet PDF文件第7页 
P4C164  
ULTRA HIGH SPEED 8K X 8  
STATIC CMOS RAMS  
FEATURES  
Full CMOS, 6T Cell  
Common Data I/O  
High Speed (Equal Access and Cycle Times)  
– 8/10/12/15/20/25/35/70/100 ns (Commercial)  
– 10/12/15/20/25/35/70/100 ns(Industrial)  
– 12/15/20/25/35/45/70/100 ns (Military)  
Fully TTL Compatible Inputs and Outputs  
Standard Pinout (JEDEC Approved)  
– 28-Pin 300 mil Plastic DIP, SOJ  
– 28-Pin 600 mil Plastic DIP  
Low Power Operation  
– 28-Pin 300 mil SOP (70 & 100ns)  
– 28-Pin 300 mil Ceramic DIP  
– 28-Pin 600 mil Ceramic DIP  
– 28-Pin 350 x 550 mil LCC  
Output Enable and Dual Chip Enable Control  
Functions  
– 32-Pin 450 x 550 mil LCC  
– 28-Pin Glass-sealed CERPACK  
– 28-Pin Solder-sealed CERPACK  
Single 5V±10% Power Supply  
Data Retention with 2.0V Supply, 10 µA Typical  
Current (P4C164L Only)  
DESCRIPTIOꢀ  
The P4C164 is a 65,536-bit ultra high-speed static RAM  
organized as 8K x 8. The CMOS memory requires no  
clocksorrefreshingandhasequalaccessandcycletimes.  
Inputs are fully TTL-compatible. The RAM operates from  
a single 5V±10% tolerance power supply. With battery  
backup (P4C164L Only), data integrity is maintained with  
supply voltages down to 2.0V. Current drain is typically 10  
µA from a 2.0V supply.  
Access times as fast as 8 nanoseconds are available,  
permitting greatly enhanced system operating speeds.  
The P4C164 is available in 28-pin 300 mil DIP and SOJ,  
28-pin600milplasticandceramicDIP,28-pin350x550mil  
LCC, 32-pin 450 x 550 mil LCC, and 28-pin glass-sealed  
CERPACK and solder-sealed flatpack.  
FUꢀCTIOꢀAL BLOCK DIAGRAM  
PIꢀ COꢀFIGURATIOꢀS  
DIP (P5, P6, C5, C5-1, D5-1, D5-2),  
SOJ (J5), CERPACK (F4), SOLDER-SEAL FLATPACK (FS-5), SOP (S6)  
SEE PAGE 8 FOR LCC PIN CONFIGURATIONS  
Document # SRAM115 REV H  
Revised April 2011  

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