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P2206HK PDF预览

P2206HK

更新时间: 2024-11-06 17:15:39
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
4页 358K
描述
PDFN 5x6

P2206HK 数据手册

 浏览型号P2206HK的Datasheet PDF文件第2页浏览型号P2206HK的Datasheet PDF文件第3页浏览型号P2206HK的Datasheet PDF文件第4页 
Dual N-Channel Enhancement Mode  
Field Effect Transistor  
P2206HK  
NIKO-SEM  
PDFN 5x6P  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
D1 D1 D2 D2  
V(BR)DSS  
60V  
RDS(ON)  
ID  
23A  
22.5mΩ  
G. GATE  
D. DRAIN  
S. SOURCE  
#1  
S1 G1 S2  
G2  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
60  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±20  
23  
TC = 25 °C  
Continuous Drain Current3  
Pulsed Drain Current1  
Continuous Drain Current  
ID  
IDM  
ID  
TC = 100 °C  
15  
100  
6
TA = 25 °C  
TA = 70 °C  
A
4.8  
25  
Avalanche Current  
Avalanche Energy  
IAS  
L = 0.1mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
31.2  
27  
mJ  
W
Power Dissipation  
Power Dissipation  
PD  
11  
1.8  
1.1  
PD  
W
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Ambient2  
Junction-to-Case  
SYMBOL  
TYPICAL  
MAXIMUM  
UNITS  
°C / W  
68  
RJA  
RJC  
4.5  
1Pulse width limited by maximum junction temperature.  
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air  
environment with TA =25°C.  
3Package limitation current is 16A.  
J-31-2  
REV 1.1  
1

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