Datasheet > P2103HVG

P2103HVG

更新时间： 2024-11-16 03:44:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	355K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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P2103HVG 数据手册

P2103HVG

SOP-8

NIKO-SEM

Dual N-Channel Enhancement Mode

Field Effect Transistor

Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

R_DS(ON)

I_D

G : GATE

21mΩ

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current

Pulsed Drain Current¹

I_D

I_DM

P_D

T_C= 25 °C

T_C= 70 °C

Power Dissipation

1.3

Junction & Storage Temperature Range

Lead Temperature (¹/₁₆” from case for 10 sec.)

T_j, T_stg

T_L

-55 to 150

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

62.5

UNITS

°C / W

Junction-to-Ambient

R_θJA

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

_GS= 0V, I_D= 250µA

_DS= V_GS, I_D= 250µA

UNIT

MIN TYP MAX

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

1.5

V_DS= 0V, V_GS= ±20V

V_DS= 24V, V_GS= 0V

±100 nA

Zero Gate Voltage Drain Current

I_DSS

µA

V_DS= 20V, V_GS= 0V, T_J= 55 °C

Jun-29-2004

12 3 4 5

中文翻译

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