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P2103NV PDF预览

P2103NV

更新时间: 2024-11-16 05:58:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 655K
描述
N- & P-Channel Enhancement Mode Field Effect Transistor

P2103NV 数据手册

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P2103NV  
NIKO-SEM  
N- & P-Channel Enhancement Mode  
Field Effect Transistor  
SOP-8  
PRODUCT SUMMARY  
V(BR)DSS RDS(ON)  
ID  
G : GATE  
21mΩ  
35mΩ  
N-Channel  
P-Channel  
30  
7A  
-6A  
D : DRAIN  
S : SOURCE  
-30  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
N-Channel P-Channel UNITS  
Drain-Source Voltage  
VDS  
30  
±20  
7
-30  
±20  
-6  
V
V
Gate-Source Voltage  
VGS  
TC = 25 °C  
TC = 70 °C  
Continuous Drain Current  
Pulsed Drain Current1  
ID  
6
-5  
A
IDM  
PD  
28  
-24  
TC = 25 °C  
TC = 70 °C  
2
Power Dissipation  
W
1.3  
Junction & Storage Temperature Range  
Lead Temperature (1/16” from case for 10 sec.)  
Tj, Tstg  
TL  
-55 to 150  
275  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
TYPICAL  
MAXIMUM  
62.5  
UNITS  
°C / W  
Junction-to-Ambient  
RθJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)  
LIMITS  
MIN TYP MAX  
UNIT  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
STATIC  
VGS = 0V, ID = 250µA  
N-Ch 30  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
V(BR)DSS  
P-Ch -30  
VGS = 0V, ID = -250µA  
VDS = VGS, ID = 250µA  
V
N-Ch 0.8  
1.5  
2.5  
VGS(th)  
P-Ch -0.8 -1.5 -2.5  
VDS = VGS, ID = -250µA  
OCT-22-2003  
1

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