Datasheet > P2103NV

P2103NV

更新时间： 2024-11-16 05:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	655K
描述
N- & P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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P2103NV 数据手册

P2103NV

NIKO-SEM

N- & P-Channel Enhancement Mode

Field Effect Transistor

SOP-8

PRODUCT SUMMARY

V_(BR)DSSR_DS(ON)

I_D

G : GATE

21mΩ

35mΩ

N-Channel

P-Channel

-6A

D : DRAIN

S : SOURCE

-30

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

N-Channel P-Channel UNITS

Drain-Source Voltage

V_DS

±20

-30

±20

-6

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current

Pulsed Drain Current¹

I_D

-5

I_DM

P_D

-24

T_C= 25 °C

T_C= 70 °C

Power Dissipation

1.3

Junction & Storage Temperature Range

Lead Temperature (¹/₁₆” from case for 10 sec.)

T_j, T_stg

T_L

-55 to 150

275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

62.5

UNITS

°C / W

Junction-to-Ambient

R_θJA

¹Pulse width limited by maximum junction temperature.

²Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (T_C= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

V_GS= 0V, I_D= 250µA

N-Ch 30

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V_(BR)DSS

P-Ch -30

V_GS= 0V, I_D= -250µA

V_DS= V_GS, I_D= 250µA

N-Ch 0.8

1.5

2.5

V_GS(th)

P-Ch -0.8 -1.5 -2.5

V_DS= V_GS, I_D= -250µA

OCT-22-2003

12 3 4 5 6 7 8

中文翻译

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