Datasheet > P12IE90F4

P12IE90F4

更新时间： 2024-11-30 02:56:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管
页数	文件大小	规格书
11页	275K
描述
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm

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中文翻译

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P12IE90F4 数据手册

STP12IE90F4

Emitter Switched Bipolar Transistor

ESBT 900 V - 12 A - 0.083 Ω

General features

CS(ON)

12A

0.083

■ High voltage / high current Cascode

configuration

■ Low equivalent on resistance

■ Very fast-switch up to 150 kHz

■ Squared RBSOA up to 900V

■ Very low C driven by R = 47Ω

TO220FP-4L

iss

■ Very low turn-off cross over time

Internal schematic diagrams

Applications

■ Flyback SMPS for adapter

■ Flyback / forward SMPS for desktop

Description

The STP12IE90F4 is manufactured in Monolithic

ESBT Technology, aimed to provide best perfor-

mances in high frequency / high voltage applica-

tions.

It is designed for use in Gate Driven based topolo-

gies.

Order codes

Part Number

Marking

Package

Packing

STP12IE90F4

P12IE90F4

TO220FP-4L

Tube

January 2007

Rev 2

1/11

www.st.com

12 3 4 5 6 7...11

中文翻译

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