Datasheet > P12NB30FP

P12NB30FP

更新时间： 2024-11-29 21:53:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	58K
描述
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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P12NB30FP 数据手册

STP12NB30

STP12NB30FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STP3NB60

STP12NB30FP

300 V

< 0.40 Ω

12A

6.5 A

■

TYPICAL R_DS(on)= 0.34 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

UNINTERRUPTIBLE POWER SUPPLY(UPS)

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP12NB30 STP12NB30FP

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

300

± 30

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

7.5

6.5

I_D

_DM(• )

P_tot

Total Dissipation at T_c= 25 ^oC

125

Derating Factor

0.28

5.5

2000

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

5.5

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

January 1998

12 3 4 5 6

中文翻译

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