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P100PH04DMO PDF预览

P100PH04DMO

更新时间: 2024-11-12 17:34:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 175A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element

P100PH04DMO 技术参数

生命周期:Obsolete包装说明:POST/STUD MOUNT, O-MUPM-H3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最大直流栅极触发电流:200 mA
JESD-30 代码:O-MUPM-H3元件数量:1
端子数量:3封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大均方根通态电流:175 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:NO端子形式:HIGH CURRENT CABLE
端子位置:UPPER触发设备类型:SCR
Base Number Matches:1

P100PH04DMO 数据手册

 浏览型号P100PH04DMO的Datasheet PDF文件第2页 

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Silicon Controlled Rectifier, 175A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
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P100PH04FL IXYS

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Silicon Controlled Rectifier, 175A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element