5秒后页面跳转
P100CH04DL PDF预览

P100CH04DL

更新时间: 2024-11-12 17:34:55
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
2页 257K
描述
Silicon Controlled Rectifier, 440A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB

P100CH04DL 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84Is Samacsys:N
其他特性:HIGH RELIABILITY标称电路换相断开时间:15 µs
配置:SINGLE关态电压最小值的临界上升速率:50 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJEDEC-95代码:TO-200AB
JESD-30 代码:O-CEDB-N2元件数量:1
端子数量:2封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:440 A
重复峰值关态漏电流最大值:20000 µA断态重复峰值电压:400 V
重复峰值反向电压:400 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:SCRBase Number Matches:1

P100CH04DL 数据手册

 浏览型号P100CH04DL的Datasheet PDF文件第2页 

与P100CH04DL相关器件

型号 品牌 获取价格 描述 数据表
P100CH04DL0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),336A I(T),TO-200AB
P100CH04DLO IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P100CH04DM IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-200AB
P100CH04DM0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),336A I(T),TO-200AB
P100CH04DMO IXYS

获取价格

Silicon Controlled Rectifier, 440A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element
P100CH04DN0 LITTELFUSE

获取价格

Silicon Controlled Rectifier, 336000mA I(T), 400V V(DRM),
P100CH04EH IXYS

获取价格

Silicon Controlled Rectifier, 440 A, 400 V, SCR, TO-200AB
P100CH04EH0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),336A I(T),TO-200AB
P100CH04EHO IXYS

获取价格

Silicon Controlled Rectifier, 440 A, 400 V, SCR
P100CH04EJ0 IXYS

获取价格

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,400V V(DRM),336A I(T),TO-200AB