生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.84 |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
最大直流栅极触发电流: | 200 mA | JESD-30 代码: | O-MUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大均方根通态电流: | 175 A | 断态重复峰值电压: | 200 V |
重复峰值反向电压: | 200 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P086PH02E2K | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175 A, 200 V, SCR | |
P086PH02E2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),175A I(T),TO-209AC | |
P086PH02E2KO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P086PH02EGO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P086PH02EH | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175 A, 200 V, SCR | |
P086PH02EH0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM) | |
P086PH02EHO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element | |
P086PH02EJ0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175000mA I(T), 200V V(DRM) | |
P086PH02EJO | IXYS |
获取价格 |
Silicon Controlled Rectifier, 175A I(T)RMS, 81000mA I(T), 200V V(DRM), 200V V(RRM), 1 Elem | |
P086PH02F2K0 | IXYS |
获取价格 |
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,200V V(DRM),175A I(T),TO-209AC |