Datasheet > P0865ETF

P0865ETF

更新时间： 2024-11-07 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	210K
描述
TO-220F

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中文翻译

获取价格

数据手册

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P0865ETF 数据手册

N-Channel High Voltage Mode

Field Effect Transistor

P0865ETF

NIKO-SEM

TO-220F

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

650V

R_DS(ON)

I_D

786mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUN RATINGS(T_A=25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

UNITS

V_DS

V_GS

650

Gate-Source Voltage

±30

T_C= 25 °C

Continuous Drain Current²

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current³

Avalanche Energy³

I_DM

IAS

6.9

EAS

238

T_C= 25 °C

Power Dissipation

P_D

T_C= 100 °C

18.5

-55 to 150

Operating Junction & Storage Temperature Range

T_j, T_stg

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

2.7

°C / W

R_JC

R_JA

Junction-to-Ambient

62.5

¹Pulse width limited by maximum junction temperature.

²Ensure that the channel temperature does not exceed 150°C.

³V_DD= 50V , L = 10mH ,starting T_J= 25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

650

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±30V

±100 nA

V_DS= 650V, V_GS= 0V , T_C= 25 °C

V_DS= 520V, V_GS= 0V , T_C= 100 °C

Gate Voltage Drain Current

I_DSS

A

J-53-1

REV 1.1

12 3 4

中文翻译

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