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P0770JF PDF预览

P0770JF

更新时间: 2024-11-19 17:15:19
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 316K
描述
TO-220F

P0770JF 数据手册

 浏览型号P0770JF的Datasheet PDF文件第2页浏览型号P0770JF的Datasheet PDF文件第3页浏览型号P0770JF的Datasheet PDF文件第4页 
N-Channel Enhancement Mode  
Field Effect Transistor  
P0770JF  
NIKO-SEM  
TO-220F  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
700V  
RDS(ON)  
ID  
7A  
630mΩ  
D
S
G
1. GATE  
2. DRAIN  
3. SOURCE  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
700  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±30  
TC = 25 ° C  
7
Continuous Drain Current2  
ID  
TC = 100 ° C  
4.4  
A
Pulsed Drain Current1  
Avalanche Current 3  
Avalanche Energy3  
IDM  
IAS  
21.9  
1.2  
EAS  
54  
mJ  
W
TC = 25 ° C  
25  
Power Dissipation  
PD  
TC = 100 ° C  
10  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
° C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Case  
Junction-to-Ambient  
SYMBOL  
TYPICAL  
MAXIMUM  
UNITS  
° C / W  
5
RJC  
RJA  
62.5  
1Pulse width limited by maximum junction temperature.  
2Ensure that the channel temperature does not exceed 150°C.  
3VDD = 50V , L = 75mH ,starting TJ = 25°C.  
M-18-5  
REV 1.0  
1

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