Datasheet > P0780ATF

P0780ATF

更新时间： 2024-02-20 22:24:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	170K
描述
N-Channel High Voltage Mode Field Effect Transistor

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中文翻译

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P0780ATF 数据手册

P0780ATF:TO-220F

P0780ATFS:TO-220FS

Halogen-Free & Lead-Free

NIKO-SEM

N-Channel High Voltage Mode

Field Effect Transistor

PRODUCT SUMMARY

V_(BR)DSS

800V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

1.94Ω

ABSOLUTE MAXIMUN RATINGS(T_A=25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL

Drain-Source Voltage

LIMITS

UNITS

V_DS

V_GS

800

Gate-Source Voltage

±30

T_C= 25 ° C

Continuous Drain Current²

I_D

T_C= 100 ° C

Pulsed Drain Current¹

Avalanche Energy³

I_DM

EAS

T_C= 25 ° C

Power Dissipation

P_D

T_C= 100 ° C

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

2.2

° C / W

R_JC

R_JA

Junction-to-Ambient

62.5

¹Pulse width limited by maximum junction temperature.

²Ensure that the channel temperature does not exceed 150°C.

³V_DD= 50V , L = 10mH ,starting T_J= 25°C.

ELECTRICAL CHARACTERISTICS (T_J= 25 ° C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

UNIT

STATIC

_GS= 0V, I_D= 250A

_DS= V_GS, I_D= 250A

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

800

2.5 3.5

4.5

V_DS= 0V, V_GS= ±30V

±100 nA

V_DS= 800V, V_GS= 0V , T_C= 25 ° C

V_DS= 640V, V_GS= 0V , T_C= 100 ° C

Gate Voltage Drain Current

I_DSS

A

100

REV 2.0

D-17-5

12 3 4

中文翻译

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