生命周期: | Obsolete | 包装说明: | POST/STUD MOUNT, O-MUPM-H3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
外壳连接: | ANODE | 配置: | SINGLE |
最大直流栅极触发电流: | 100 mA | JESD-30 代码: | O-MUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大均方根通态电流: | 100 A | 断态重复峰值电压: | 1200 V |
重复峰值反向电压: | 1200 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
P0295WC12D | IXYS |
获取价格 |
Silicon Controlled Rectifier, 600A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
P0295WC12D | LITTELFUSE |
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The Littelfuse "P" series of fast switching thyristors have a regenerative gate structure | |
P0295WC12E | IXYS |
获取价格 |
Silicon Controlled Rectifier, 600A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
P0295WC12E | LITTELFUSE |
获取价格 |
Silicon Controlled Rectifier, 600A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
P0295WC12F | IXYS |
获取价格 |
Silicon Controlled Rectifier, 600A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
P02BN120CF5ST | DILABS |
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Milli-Cap | |
P02BN121CF5ST | DILABS |
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Milli-Cap | |
P02BN1R2CF5ST | DILABS |
获取价格 |
Milli-Cap | |
P02BN1R5CD5ST | DILABS |
获取价格 |
Milli-Cap | |
P02BN1R5CF5ST | DILABS |
获取价格 |
Milli-Cap |