Datasheet > OMH315

OMH315

更新时间： 2024-10-29 22:28:03

品牌	Logo	应用领域
其他 - ETC		驱动器接口集成电路光电二极管局域网
页数	文件大小	规格书
4页	42K
描述
DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE

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OMH315 数据手册

OMH310

OMH315

DUAL, LOW VOLTAGE, LOW R_DS(on), MOSFET

H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE

Dual 50 Volt, 15 And 20 Amp H-Bridge

With Current And Temperature Sensing

In A Low Profile Plastic Package

FEATURES

• H-Bridge Configuration

• Zener Gate Protection

• 10 m Shunt Resistor

• 2 Linear Thermal Sensors, One For Each Bridge

• Isolated Package

• Output Currents Up To 20 Amps

DESCRIPTION

This series of MOSFET switches is configured as a Dual H-Bridge with common V_DD

lines, precision series shunt resistor in the source line, and sensing elements to

monitor the substrate temperature of each switch. This device is ideally suited for

Stepping Motor Control applications where size, performance, and efficiency are key.

2.1

(T = @ 25°C)

MAXIMUM RATINGS

Part

Number

V_DS

(Volts)

R_DS(on)

(m )

I_D

Package

(Amps)

OMH310

OMH315

100

MP-3

(T = @ 25°C unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS

Parameter

OMH310 OMH315 Units

Drain Source Voltage, V_DS

Drain-Gate (R_GS= 1m ), V_DGR

Continuous Drain Current, I_D@ T = 25°C

Continuous Drain Current, I_D@ T = 70°C

(1)

Pulse Drain Current, I_DM

100

Maximum Power Dissipation, P_D@ T = 25°C ⁽²⁾

Maximum Power Dissipation, P_D@ T = 70°C ⁽²⁾

1 1

0 . 2

5.0

Linear Derating Factor, Junction-To-Case

Thermal Resistance, Junction-To-Case

0.33

3.0

W/C

°C/W

Notes:

(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.

2.1 - 29

4 11 R0

12 3 4

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