生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 输入特性: | STANDARD |
接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER | JESD-30 代码: | R-XUFM-X18 |
功能数量: | 1 | 端子数量: | 18 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
输出特性: | TOTEM-POLE | 输出电流流向: | SOURCE AND SINK |
输出极性: | TRUE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
认证状态: | Not Qualified | 标称供电电压: | 18 V |
表面贴装: | NO | 温度等级: | MILITARY |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
OMD120N10FL | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 100V V(BR)DSS | 120A I(D) |
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OMD150N06FL | ETC |
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TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D) |
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OMD200 | ETC |
获取价格 |
200V Quad N-Channel MOSFET in a M-12 package |
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OMD200V | INFINEON |
获取价格 |
Power Field-Effect Transistor, 25A I(D), 200V, 0.11ohm, 4-Element, N-Channel, Silicon, Met |
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OMD240N10HL | ETC |
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TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 100V V(BR)DSS | 240A I(D) |
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OMD300N06HL | ETC |
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TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 60V V(BR)DSS | 300A I(D) |
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OMD32F60ML | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 60A I(C) | M:ML111MW084 |
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OMD38L60ML | ETC |
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TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 76A I(C) | M:ML111MW084 |
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OMD400 | ETC |
获取价格 |
400V Quad N-Channel MOSFET in a M-12 package |
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OMD400(6SIP) | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2-Element, Metal-oxide Semiconductor FET, |
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