Datasheet > OMD200

OMD200

更新时间： 2024-09-28 23:24:19

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	48K
描述
200V Quad N-Channel MOSFET in a M-12 package

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数据手册

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OMD200 数据手册

OMD100 OMD400

OMD200 OMD500

FOUR N-CHANNEL MOSFETS IN HERMETIC

POWER PACKAGE

100V Thru 500V, Up To 25 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

• Isolated Hermetic Metal Package

• Fast Switching

• Low R_DS(on)

• Available Screened To MIL-S-19500, TX, TXV and S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

MAXIMUM RATINGS PER TRANSISTOR @ 25°C

PART NUMBER

OMD100

V_DS

R_DS(on)

.08

I_D

100V

200V

400V

500V

25A

13A

11A

OMD200

.11

OMD400

.35

3.1

OMD500

.43

SCHEMATIC

CONNECTION DIAGRAM

FET

1.520

.150

.500

MIN.

.260

45°

REF

.170 R.

TYP.

1.000

SQ.

.156 DIA.

TYP.

.040 LEAD

DIA.

.125

(10 PLCS)

.050

.187

TYP.

.270

.625

FET

FET 3

4 11 R2

Supersedes 1 07 R1

3.1 - 1

12 3 4

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OMD500(6SIP)	INFINEON	获取价格	Power Field-Effect Transistor, 2-Element, Metal-oxide Semiconductor FET,
OMD500T	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 500V, 0.43ohm, 4-Element, N-Channel, Silicon, Met