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OM6230SS PDF预览

OM6230SS

更新时间: 2024-11-22 23:24:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 36K
描述
1000V Dual N-Channel MOSFET in a S-6D package

OM6230SS 数据手册

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OM6227SS OM6230SS OM6232SS  
OM6228SS OM6231SS OM6233SS  
DUAL HIGH CURRENT POWER MOSFETS  
IN HERMETIC ISOLATED SIP PACKAGE  
400V, 500V, 1000V, Up To 24 Amp N-Channel,  
Dual Size 6 High Energy MOSFETs  
FEATURES  
• Dual Uncommitted MOSFETs  
• Isolated Hermetic Metal Package  
• Size 6 Die, High Energy, High Voltage  
• Fast Switching, Low Drive Current  
• Ease of Paralleling For Added Power  
• Low RDS(on)  
• Available Screened to MIL-S-19500, TX, TXV And S Levels  
DESCRIPTION  
This series of hermetically packaged products feature the latest advanced MOSFET  
and packaging technology. They are ideally suited for Military requirements where  
small size, high performance and high reliability are required, and in applications  
such as switching power supplies, motor controls, inverters, choppers, audio  
amplifiers and high energy pulse circuits. This series also features avalanche high  
energy capability at elevated temperatures.  
MAXIMUM RATINGS  
PART NUMBER  
OM6227SS  
OM6228SS  
OM6230SS  
OM6231SS  
OM6232SS  
VDS  
400  
RDS(on)  
.20  
ID (Amp)  
24  
*Package  
S-6D  
3.1  
500  
.27  
22  
S-6D  
1000  
400  
1.30  
.20  
10  
S-6D  
24  
S-6E  
500  
.27  
22  
S-6E  
OM6233SS  
1000  
1.30  
10  
S-6E  
* See Mechanical Drawing  
SCHEMATIC  
1
6
DRAIN  
DRAIN  
GATE  
3
GATE  
4
BODY  
DIODE  
BODY  
DIODE  
2
SOURCE  
SOURCE  
5
4 11 R2  
Supersedes 2 07 R1  
3.1 - 123  

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