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OM6238SDT PDF预览

OM6238SDT

更新时间: 2024-11-19 21:13:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
6页 64K
描述
Power Field-Effect Transistor, 14A I(D), 100V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-6

OM6238SDT 数据手册

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OM6234SD/SM OM6236SD/SM OM6238SD/SM OM6240SD/SM  
OM6235SD/SM OM6237SD/SM OM6239SD/SM OM6241SD/SM  
DUAL POWER MOSFETS IN HERMETIC  
ISOLATED DUAL IN-LINE PACKAGES  
100V Thru 500V, Dual High Current,  
N-Channel MOSFETs  
FEATURES  
• Two Isolated MOSFETs In A Hermetic Metal Package, Size 3 And 4 Die  
• Available In A Power DIP And Surface Mount Configuration  
• Fast Switching, Low Drive Current  
• Ease Of Paralleling For Added Power  
• Low RDS(on)  
• Available Screened To MIL-S-19500, TX, TXV And S Level  
DESCRIPTION  
This series of hermetically packaged products feature the latest advanced MOSFET  
and packaging technology. They are ideally suited for Military requirements where  
small size, high performance and high reliability are required, and in applications such  
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and  
high energy pulse circuits.  
MAXIMUM RATINGS (Per Transistor) @ TC = 25°C  
PART NUMBER  
Die Size  
VDS (V)  
RDS(on) ( )  
ID(MAX) (A)  
OM6234SD/SM  
OM6238SD/SM  
OM6235SD/SM  
OM6239SD/SM  
OM6236SD/SM  
OM6240SD/SM  
OM6237SD/SM  
OM6241SD/SM  
3
4
3
4
3
4
3
4
.18  
.095  
.40  
.18  
1.00  
.55  
14  
22  
9
18  
5.5  
10  
4.5  
8
100  
3.1  
200  
400  
500  
1.50  
.85  
SCHEMATIC  
PIN CONNECTION  
DRAIN  
DRAIN  
2
5
6
3
BODY  
DIODE  
BODY  
DIODE  
1
2
3
6
5
4
GATE  
GATE  
SOURCE  
SOURCE  
1
4
3.1 - 129  
4 11 R0  

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RES 620K OHM 1W 5% AXIAL