Datasheet > OM6228SS

OM6228SS

更新时间： 2024-11-18 23:24:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	36K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 500V V(BR)DSS \| 24A I(D) \| SIP

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中文翻译

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数据手册

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OM6228SS 数据手册

OM6227SS OM6230SS OM6232SS

OM6228SS OM6231SS OM6233SS

DUAL HIGH CURRENT POWER MOSFETS

IN HERMETIC ISOLATED SIP PACKAGE

400V, 500V, 1000V, Up To 24 Amp N-Channel,

Dual Size 6 High Energy MOSFETs

FEATURES

• Dual Uncommitted MOSFETs

• Isolated Hermetic Metal Package

• Size 6 Die, High Energy, High Voltage

• Fast Switching, Low Drive Current

• Ease of Paralleling For Added Power

• Low R_DS(on)

• Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications

such as switching power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits. This series also features avalanche high

energy capability at elevated temperatures.

MAXIMUM RATINGS

PART NUMBER

OM6227SS

OM6228SS

OM6230SS

OM6231SS

OM6232SS

V_DS

400

R_DS(on)

.20

I_D(Amp)

*Package

S-6D

3.1

500

.27

S-6D

1000

400

1.30

.20

S-6D

S-6E

500

.27

S-6E

OM6233SS

1000

1.30

S-6E

* See Mechanical Drawing

SCHEMATIC

DRAIN

GATE

BODY

DIODE

BODY

DIODE

SOURCE

4 11 R2

Supersedes 2 07 R1

3.1 - 123

12 3 4

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