Datasheet > OM200F120CMD

OM200F120CMD

更新时间： 2024-11-01 23:24:15

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
4页	78K
描述
1200V 200A Phase Leg Hi-Rel CERMOD IGBT Power Module

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OM200F120CMD 数据手册

205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, www.omnirel.com

ELECTRICAL CHARACTERISTICS: OM200F120CMD (Tc= 25°C unless otherwise specified)

Characteristic

Symbol

Min.

Typ.

Max

Unit

OFF CHARACTERISTICS

Collector Emitter Breakdown Voltage, VCE=0V

Zero Gate Voltage Drain Current, VGE=0, VCE =1200V

Gate Emitter Leakage Current, VGE=+/-15V, VCE=0V

ON CHARACTERISTICS

VCES

ICES

IGES

1200

100

Gate Threshold Voltage, VCE=VGE, IC=6mA

Collector Emitter Saturation Voltage, VGE=15V, Ic=200A

DYNAMIC CHARACTERISTICS

VGE(TH)

VCE(SAT)

4.5

5.5

2.5

6.5

3.0

Fwd. Transconductance

Input Capacitance

VCE=5V, IC=200A

VGE=0

gfs

Cies

Coes

Cres

Output Capacitance

VCE=25V

Rev. Transfer Capacitance

f=1.0MHz

SWITCHING INDUCTIVE LOAD CHARACTERISTICS

Turn-On Delay Time

Rise Time

Turn-on Losses

t(on)

Eon

175

140

400

850

VCC= 600V, IC=200A

VGE=+15/-10V, RG=5.1W

L=100mH

Turn-off Delay Time

Fall Time

Turn-off Losses

td(off)

Eoff

720

120

DIODE CHARACTERISTICS

Maximum Forward Voltage

Qrr

Irr

2.0

1.8

2.8

2.3

IF=200A, Tj=25°C

Tj=125°C

VR=600V, Tj=25°C

IF=200A, Tj=125°C

dI/dt=-1500A/mS Tj=25°C

Tj=125°C

Reverse Recovery

Characteristics

trr

100

150

Tj=25°C

Tj=125°C

THERMAL AND MECHANICAL CHARACTERISTICS

Thermal Resistance, Junction to Case (Per IGBT)

Thermal Resistance, Junction to Case (Per Diode)

Maximum Junction Temperature

RthJC

TjMAX

Vis_RMS

0.07

0.12

150

2500

°C/W

°C

Isolation Voltage

Screw Torque

Mounting

Terminals

in-lb

Grams

Screw Torque (M6)

Screw Torque (M3)

Module Weight

320

12/08/98

Rev. C

12 3 4

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