Datasheet > OLF249

OLF249

更新时间： 2024-11-05 05:58:15

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管输出元件
页数	文件大小	规格书
3页	29K
描述
Radiation Tolerant Phototransistor

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OLF249 数据手册

OLF249

Radiation Tolerant Phototransistor

Hermetic Surface Mount Optocoupler

ISO

LINK

.015±.002

BASE

ANODE

.050 BSC

COLLECTOR

.180 SQ. MAX

.200 MIN.

CATHODE

EMITTER

.100 MAX.

.030±.005

.004/.006

SEATING PLANE

SCHEMATIC

PACKAGE OUTLINE

Description

Features

The OLF249 consists of a light emit-

♦ Hermetic SMT package

ting diode optically coupled to a NPN silicon

phototransistor mounted in a 8-pin hermetic

surface mount flat pack package. The

leads can be formed to provide compliant

solder connections to the mounting sub-

strate. Electrical parameters are similar to

the JEDEC registered 4N49 optocoupler but

with much better CTR degradation charac-

teristics due to radiation exposure

♦ Compliant surface mounting leads

♦ High current transfer ratio

♦ Small package size

♦ High reliability and rugged construction

♦ Hi-rel screening available

♦ Radiation tolerant

Special electrical parametric selections

are availabe on request.

NOTES:

1. Measured between pins 1, 2 , 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. TA = 25°C and duration = 1 second.

2. Derate linearly to 125°C free-air temperature at 0.67 mA / °C above 65°C.

3. For pulse width ≤ 1 µS, pulse repetition rate ≤ 300 pps.

4. Derate linearly to 125°C free-air temperature at 3.0 mW / °C above 25 °C

12 3

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