Datasheet > OEL-53G-C310

OEL-53G-C310

更新时间： 2024-11-17 15:19:19

品牌	Logo	应用领域
OPTOWAY		/
页数	文件大小	规格书
4页	192K
描述
Bare Die

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OEL-53G-C310 数据手册

Optoway

OEL-53G-C310

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OEL-53G-C310

53Gbd EML Chip, CWDM

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OEL-53G-C310 is a lumped electro-absorption modulator laser (EML) diode; It is designed for

high-speed digital operation at a controlled temperature range.

KEY FEATURES



Reliable InGaAsP DFB laser diode butt-joint coupled with electro-absorption (EA) modulator

Optimized EA structure for high extinction ratio (ER) operation

Superb chip bandwidth > 40GHz enabled by modulator passivation layer design

Suitable for 25G/53G NRZ and PAM4 modulation

APPLICATION



100G LR1

100G DR4

RECOMMENDED OPERATION TEMPERATURE RANGE

Symbol

Parameter

Min.

Max.

Unit

Test Temperature

°C

ELECTRICALAND OPTICAL CHARACTERISTICS

Expected performance after mounted on chip carrier, not guaranteed. Assembly process may impact the

parameter values.

ELECTRICALAND OPTICAL CHARACTERISTICS (Test temperature=53°C, unless otherwise specified)

Symbol Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_th

Threshold Current

Operating Voltage

Vea=0V

V_OP

1.3

1.8

Iop=70mA,Vea=0V

Iop=70mA,Vea=0 ~ -2V

Iop=70mA,Vpp=1V

Iop=70mA

Optical Output Power, Broad Area PD

DC Extinction Ratio, Fiber Coupled

DC ER

Vea

EA Operating Voltage

-2

-0.2

λc

Center Wavelength*

1304.5

1311

1317.5

Side Mode Suppression Ratio

Far-field Angle, Vertical

SMSR

Iop=70mA

deg

GHz

Far-field Angle, Horizontal

Small Signal Modulation Bandwidth

f3dB

Iop=70mA,Vea at operation point

*All wavelengths are available upon request by customers.

********************************************************************************************************************************************************

OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303

Tel: 886-3-5979798

Fax:886-3-5979737

e-mail: sales@optoway.com http: // www.optoway.com

6/13/2023 V2.0

12 3 4

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