Optoway
OEL-53G-LXX-H1
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OEL-53G-LXX-H1
53Gbd EML Chip, LWDM, High Power
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OEL-53G-LXX-H1 is a high output power, lumped electro-absorption modulator laser (EML)
diode; It is designed for high-speed digital operation at a controlled temperature range.
KEY FEATURES
Reliable InGaAsP DFB laser diode butt-joint coupled with electro-absorption (EA) modulator
Optimized DFB for high output power and EA structure for high extinction ratio (ER) operation
Superb chip bandwidth > 40GHz enabled by modulator passivation layer design
Suitable for 25G/53G NRZ and PAM4 modulation
APPLICATION
100G LR1-20 and ER1-30
100G ER1-30 BIDI
50G ER1-40
RECOMMENDED OPERATION TEMPERATURE RANGE
Symbol
Parameter
Min.
Max.
Unit
53
43
Tc
Test Temperature
°C
ELECTRICALAND OPTICAL CHARACTERISTICS
Expected performance after mounted on chip carrier, not guaranteed. Assembly process may impact the
parameter values.
ELECTRICALAND OPTICAL CHARACTERISTICS (Test temperature=53°C, unless otherwise specified)
Symbol Parameter
Test Conditions
Min.
Typ.
Max.
Unit
15
25
Ith
Threshold Current
Operating Voltage
mA
V
Vea=0V
VOP
1.3
1.8
Iop=90mA,Vea=0V
Iop=70mA,Vea=0 ~ -2V
Iop=70mA,Vpp=1V
Iop=70mA
12
12
-2
Po
Optical Output Power, Broad Area PD
DC Extinction Ratio, Fiber Coupled
mW
dB
DC ER
Vea
EA Operating Voltage
-0.2
V
nm
λc
Center Wavelength*
Note.1
Side Mode Suppression Ratio
Far-field Angle, Vertical
35
dB
SMSR
Fv
Iop=70mA
38
33
40
deg
deg
GHz
Far-field Angle, Horizontal
Small Signal Modulation Bandwidth
Fh
f3dB
Iop=70mA,Vea at operation point
*All wavelengths are available upon request by customers.
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OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303
Tel: 886-3-5979798
Fax:886-3-5979737
e-mail: sales@optoway.com http: // www.optoway.com
6/7/2023 V1.0