Datasheet > ODD-3W-2_13

ODD-3W-2_13

更新时间： 2024-11-07 12:31:03

品牌	Logo	应用领域
OPTODIODE		光电电池二极管光电二极管
页数	文件大小	规格书
2页	335K
描述
RED ENHANCED 3.1mm2 X 2 BI-CELL PHOTODIODE

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ODD-3W-2_13 数据手册

RED ENHANCED 3.1mm²X 2 BI-CELL PHOTODIODE

ODD-3W-2

FEATURES

ꢀ025

ꢀ007

• Red enhanced

43°

.7ꢁ3

.37 MIN

ANODE CELL #0

• Low noise

.7.7

.7.3

• High response

ꢀ225

ꢀ2.6

• High shunt resistance

• Low profile TO-5 package

∅

ꢀ.35

∅

ꢀ.06

ꢀ.24

57°

ꢀ.ꢁ7

∅

VIEWING

ANGLE

∅ ꢀ705

COMMON CATHODE

∅ ꢀ277

.727

ꢀ702 MAX

GLASS HEIGHT

CASE GROUND

ANODE CELL #2

ACTIVE AREA POSITION RELATIVE TO ꢀ.358ꢀ.ꢁ7

DIMENSION ꢀ707ꢂ

RoHS

ꢀ000 [2ꢀ52]

0 ANODE CELL #0

ꢀ774 [7ꢀ07] GAP

CELL #0

COMMON CATHODE

ꢀ000 [2ꢀ52]

CASE GROUND

2 X ꢀ745 [0ꢀ22]

ACTIVE AREA

CELL #2

. ANODE CELL #2

2 X

ꢀ077 [2ꢀ34]

ACTIVE AREA

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

CHARACTERISTIC TEST CONDITIONS

Dark Current, I_DV_R= 5 V

MIN

TYP

0.9

300

MAX

2.5

UNITS

Shunt Resistance, R_SH

Junction Capacitance, C_J

Spectral Application Range, λrange

Responsivity, R

V_R= 10 mV

MΩ

V_R= 0 V, f = 1 MHz

V_R= 10 V, f = 1 MHz

Spot Scan

7.5

250

0.32

0.50

1100

λ = 633 nm, V_R= 0 V

λ = 900 nm, V_R= 0 V

I_R= 10 µA

0.36

0.60

A/W

Responsivity, R

Breakdown Voltage, V_R

Noise Equivalent Power, NEP

Response Time, t_r¹

V_R= 0 V, λ = 950 nm

RL = 50 Ω, V_R= 0 V

RL = 50 Ω, V_R= 10 V

2.5 x 10^-14

W/√HZ

nsec

190

Response Time, t_r¹

¹Response time of 10% to 90% is specified at 660 nm.

ABSOLUTE MAXIMUM RATINGS AT 25°C

PARAMETER

MIN

MAX

100

UNITS

Reverse Voltage, V_R

Storage Temperature, T_STG

– 55

– 40

+150

+125

+260

°C

Operating Temperature, T_O

°C

Lead Soldering Temperature (1/16" from case for 3 sec)

°C

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

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