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NX8565LE517-BC PDF预览

NX8565LE517-BC

更新时间： 2024-11-08 14:23:27
品牌 Logo 应用领域
瑞萨 - RENESAS 监视器光电
页数 文件大小 规格书
14页 155K
描述
LASER DIODE W/MONITOR,1.552UM PEAK WAVELENGTH,MODULE-BF

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中文翻译

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NX8565LE517-BC 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
最大正向电流：0.15 A最大正向电压：2 V
最高工作温度：70 °C最低工作温度：-20 °C
光电设备类型：LASER DIODE峰值波长：1552 nm
最长响应时间：1.25e-10 s子类别：Laser Diodes
Base Number Matches：1

NX8565LE517-BC 数据手册

 浏览型号NX8565LE517-BC的Datasheet PDF文件第2页浏览型号NX8565LE517-BC的Datasheet PDF文件第3页浏览型号NX8565LE517-BC的Datasheet PDF文件第4页浏览型号NX8565LE517-BC的Datasheet PDF文件第5页浏览型号NX8565LE517-BC的Datasheet PDF文件第6页浏览型号NX8565LE517-BC的Datasheet PDF文件第7页 
DATA SHEET  
LASER DIODE  
NX8564/8565/8566LE Series  
EA MODULATOR INTEGRATED  
1 550 nm MQW-DFB LASER DIODE MODULE FOR  
2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS  
DESCRIPTION  
The NX8564/8565/8566LE Series is an Electro-Absorption (EA) modulator  
integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed  
Feed-Back (DFB) laser diode. The module is capable of 2.5 Gb/s applications  
of over 360 km, 600 km, 240 km ultralong-reach and available for Dense  
Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T  
recommendations, enabling a wide range of applications.  
FEATURES  
•
•
Integrated electroabsorption modulator  
Very low dispersion penalty (over 360 km (6480 ps/nm), NX8564LE-BC/CC)  
(over 600 km (10800 ps/nm), NX8565LE-BC/CC)  
(over 240 km (4320 ps/nm), NX8566LE-BC/CC)  
Low modulation voltage  
•
•
Available for DWDM wavelengths based on ITU-T recommendations  
(100 GHz grid, refer to ORDERING INFORMATION)  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PL10186EJ03V0DS (3rd edition)  
Date Published January 2004 CP(K)  
Printed in Japan  
The mark  shows major revised points.  
NEC Compound Semiconductor Devices 2000, 2004  
1234567...14

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6014-BC CEL

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NX8565LE6014-CC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6023-BC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6023-CC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6031-BC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6031-CC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6040-BC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA
NX8565LE6040-CC CEL

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 		NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REA

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